The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Sign Changes of Intrinsic Spin Hall Effect in Semiconductors and Simple Metals: First-Principles Calculations
Open accessAbstract
First-principles calculations are applied to study spin Hall effect in semiconductors and simple metals. We found that intrinsic spin Hall conductivity (ISHC) in realistic materials shows rich sign changes, which may be used to distinguish the effect from the extrinsic one. The calculated ISHC in n-doped GaAs can be well compared with experiment, and it differs from the sign obtained from the extrinsic effect. On the other hand, the ISHC in W and Au, which shows opposite sign, respectively, is robust and not sensitive to the disorder.
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Hirsch, J. E. (1999) · Physical Review Letters · doi:10.1103/physrevlett.83.1834 · Cited by 3,163
Cited by
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Liu, G.-B., Shan, W.-Y., Yao, Y., Yao, W., & Xiao, D. (2013) · Physical Review B · doi:10.1103/physrevb.88.085433 · Cited by 1,012
Self-citationPrediction of a Two-Dimensional Organic Topological Insulator
Wang, Z. F., Su, N., & Liu, F. (2013) · Nano Letters · doi:10.1021/nl401147u · Cited by 346
Metadata
- Authors
- Yao, Y., & Fang, Z.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2005-10-03
- Volume
- 95
- Issue
- 15
- Pages
- 156601-156601
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2028031273
- Cited by
- 181
- References
- 1
- FWCI
- 3.89
- Type
- journal article
- Language
- en
- Open access
- green
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- Yao, Y., & Fang, Z. (2005). Sign Changes of Intrinsic Spin Hall Effect in Semiconductors and Simple Metals: First-Principles Calculations. Physical Review Letters. https://doi.org/10.1103/physrevlett.95.156601
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