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Divacancy in 4H-SiC
Abstract
Electron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground states of the neutral divacancy. The spin density is found to be located mainly on three nearest C neighbors of the silicon vacancy, whereas it is negligible on the nearest Si neighbors of the carbon vacancy.
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Citations
Cited by
Room temperature coherent control of defect spin qubits in silicon carbide
Koehl, W. F., Buckley, B. B., Heremans, F. J., Calusine, G., & Awschalom, D. D. (2011) · Nature · doi:10.1038/nature10562 · Cited by 848
Material platforms for spin-based photonic quantum technologies
Atatüre, M., Englund, D., Vamivakas, N., Lee, S.-Y., & Wrachtrup, J. (2018) · Nature Reviews Materials · doi:10.1038/s41578-018-0008-9 · Cited by 766
4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics
Lukin, D. M., Dory, C., Guidry, M. A., Yang, K. Y., Mishra, S. D., Trivedi, R., Radulaski, M., Sun, S., Vercruysse, D., Ahn, G. H., et al. (2020) · Nature Photonics · doi:10.1038/s41566-019-0556-6 · Cited by 493
Isolated electron spins in silicon carbide with millisecond coherence times
Christle, D. J., Falk, A. L., Andrich, P., Klimov, P. V., Hassan, J. U., Son, N. T., Janzén, E., Ohshima, T., & Awschalom, D. D. (2015) · Nature Materials · doi:10.1038/nmat4144 · Cited by 489
Self-citationPolytype control of spin qubits in silicon carbide
Falk, A. L., Buckley, B. B., Calusine, G., Koehl, W. F., Dobrovitski, V. V., Politi, A., Zorman, C. A., Feng, P. X.-L., & Awschalom, D. D. (2013) · Nature Communications · doi:10.1038/ncomms2854 · Cited by 411
Metadata
- Authors
- Son, N. T., Carlsson, P., ul Hassan, J., Janzén, E., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Morishita, N., Ohshima, T., & Itoh, H.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2006-02-06
- Volume
- 96
- Issue
- 5
- Pages
- 055501-055501
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W1982930664
- Cited by
- 215
- References
- 0
- FWCI
- 11.47
- Type
- journal article
- Language
- en
- Open access
- closed
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- Son, N. T., Carlsson, P., ul Hassan, J., Janzén, E., Umeda, T., Isoya, J., Gali, A., Bockstedte, M., Morishita, N., Ohshima, T., & Itoh, H. (2006). Divacancy in 4H-SiC. Physical Review Letters. https://doi.org/10.1103/physrevlett.96.055501
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