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Electronic Structure of Defect States in Hydroxylated and Reduced RutileTiO2(110)Surfaces

Di Valentin, Cristiana, Pacchioni, Gianfranco, Selloni, Annabella·2006·Physical Review Letters

Abstract

It has been experimentally observed that a bridging oxygen vacancy on the rutile TiO2(110) surface introduces localized Ti3+ 3d1 states about 1 eV below the conduction band which are not removed upon dissociation of a water molecule and formation of a pair of hydroxyl groups. Density functional calculations based on pure exchange-correlation functionals have not been able to satisfactorily reproduce and analyze these findings. Here we show that a correct description of the localized defect states on reduced and hydroxylated TiO2(110) is achieved only if proper geometry relaxation is accounted for using hybrid exchange functionals. We confirm the electron trapping nature of Ti(OH) groups but find no evidence that these defects should also act as hole traps by formation of Ti4+(OH)* radicals.

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Metadata

Authors
Di Valentin, C., Pacchioni, G., & Selloni, A.
Venue
Physical Review Letters
Published
2006-10-18
Volume
97
Issue
16
Pages
166803-166803
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W2062387493
Cited by
656
References
6
FWCI
25.58
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Electronic Structure of Defect States in Hydroxylated and Reduced RutileTiO2(110)Surfaces. https://app.cochat.ai/papers/10.1103/physrevlett.97.166803
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Di Valentin, C., Pacchioni, G., & Selloni, A. (2006). Electronic Structure of Defect States in Hydroxylated and Reduced RutileTiO2(110)Surfaces. Physical Review Letters. https://doi.org/10.1103/physrevlett.97.166803

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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