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Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance

Open access
Marumoto, Kazuhiro, Kuroda, Shin-ichi, Takenobu, Taishi, Iwasa, Yoshihiro·2006·Physical Review Letters

Abstract

An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S = 1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.

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Metadata

Authors
Marumoto, K., Kuroda, S.-I., Takenobu, T., & Iwasa, Y.
Venue
Physical Review Letters
Published
2006-12-22
Volume
97
Issue
25
Pages
256603-256603
ISSN
  • 0031-9007 (ISSN-L)
  • 1079-7114
OpenAlex
W1980030281
Cited by
174
References
0
FWCI
7.08
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance. https://app.cochat.ai/papers/10.1103/physrevlett.97.256603
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Marumoto, K., Kuroda, S.-I., Takenobu, T., & Iwasa, Y. (2006). Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance. Physical Review Letters. https://doi.org/10.1103/physrevlett.97.256603

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