The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Electronic Transport and Quantum Hall Effect in Bipolar Graphenep−n−pJunctions
Open accessAbstract
We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.
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Cites
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Self-citationElectronic properties of disordered two-dimensional carbon
Peres, N. M. R., Guinea, F., & Castro Neto, A. H. (2006) · Physical Review B · doi:10.1103/physrevb.73.125411 · Cited by 1,445
Cited by
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
“There is a rapid progress in the measurement of trans-port properties of graphene ribbons with additional topgates that play the role of tunable potential barriers(Han et al., 2007; Huard et al., 2007; Lemme et al., 2007;Özyilmaz et al., 2007; Williams et al., 2007).”
BackgroundCurrent saturation in zero-bandgap, top-gated graphene field-effect transistors
Meric, I., Han, M. Y., Young, A. F., Ozyilmaz, B., Kim, P., & Shepard, K. L. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.268 · Cited by 1,634
Self-citationColloquium : Andreev reflection and Klein tunneling in graphene
Beenakker, C. W. J. (2008) · Reviews of Modern Physics · doi:10.1103/revmodphys.80.1337 · Cited by 1,302
Quantum interference and Klein tunnelling in graphene heterojunctions
Young, A. F., & Kim, P. (2009) · Nature Physics · doi:10.1038/nphys1198 · Cited by 1,183
Self-citationHot Carrier–Assisted Intrinsic Photoresponse in Graphene
Gabor, N. M., Song, J. C. W., Ma, Q., Nair, N. L., Taychatanapat, T., Watanabe, K., Taniguchi, T., Levitov, L. S., & Jarillo-Herrero, P. (2011) · Science · doi:10.1126/science.1211384 · Cited by 1,076
Self-citation
Metadata
- Authors
- Özyilmaz, B., Jarillo-Herrero, P., Efetov, D., Abanin, D. A., Levitov, L. S., & Kim, P.
- Venue
- Physical Review Letters
- Publisher
- American Physical Society (APS)
- Published
- 2007-10-17
- Volume
- 99
- Issue
- 16
- Pages
- 166804-166804
- ISSN
- 0031-9007 (ISSN-L)
- 1079-7114
- OpenAlex
- W2123990918
- Cited by
- 472
- References
- 3
- FWCI
- 28.52
- Type
- journal article
- Language
- en
- Open access
- green
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- Özyilmaz, B., Jarillo-Herrero, P., Efetov, D., Abanin, D. A., Levitov, L. S., & Kim, P. (2007). Electronic Transport and Quantum Hall Effect in Bipolar Graphenep−n−pJunctions. Physical Review Letters. https://doi.org/10.1103/physrevlett.99.166804
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