The DOI matches its Crossref record; 86 of the 86 references it cites were found in a registry or an index.
Defect identification in semiconductors with positron annihilation: Experiment and theory
Open accessAbstract
Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.
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Cited by
Yin, Y., Han, J., Zhang, Y., Zhang, X., Xu, P., Yuan, Q., Samad, L., Wang, X., Wang, Y., Zhang, Z., et al. (2016) · Journal of the American Chemical Society · doi:10.1021/jacs.6b03714 · Cited by 1,259
Recent developments in the ABINIT software package
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Yin, Y., Zhang, Y., Gao, T., Yao, T., Zhang, X., Han, J., Wang, X., Zhang, Z., Xu, P., Zhang, P., et al. (2017) · Advanced Materials · doi:10.1002/adma.201700311 · Cited by 521
Defect engineering in thermoelectric materials: what have we learned?
Zheng, Y., Slade, T. J., Hu, L., Tan, X. Y., Luo, Y., Luo, Z.-Z., Xu, J., Yan, Q., & Kanatzidis, M. G. (2021) · Chemical Society Reviews · doi:10.1039/d1cs00347j · Cited by 482
Point defect engineering in thin-film solar cells
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Metadata
- Authors
- Tuomisto, F., & Makkonen, I.
- Venue
- Reviews of Modern Physics
- Publisher
- American Physical Society (APS)
- Published
- 2013-11-14
- Volume
- 85
- Issue
- 4
- Pages
- 1583-1631
- ISSN
- 0034-6861 (ISSN-L)
- 1539-0756
- OpenAlex
- W2244527694
- Cited by
- 828
- References
- 86
- FWCI
- 48.75
- Type
- journal article
- Language
- en
- Open access
- green
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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