The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Short-channel effect in fully depleted SOI MOSFETs
Abstract
The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results. It is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness.>
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Citations
Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Cited by
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Yan, R.-H., Ourmazd, A., & Lee, K. F. (1992) · IEEE Transactions on Electron Devices · doi:10.1109/16.141237 · Cited by 910
Carbon Nanotubes for High-Performance Electronics—Progress and Prospect
Appenzeller, J. (2008) · Proceedings of the IEEE · doi:10.1109/jproc.2007.911051 · Cited by 379
Chakraborty, A., & Sarkar, A. (2017) · Journal of Computational Electronics · doi:10.1007/s10825-017-0999-2 · Cited by 94
Akarvardar, K., Cristoloveanu, S., & Gentil, P. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.882283 · Cited by 48
Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure
Ryu, D., Kim, M., Yu, J., Kim, S., Lee, J.-H., & Park, B.-G. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2975255 · Cited by 40
Metadata
- Authors
- Young, K. K.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1989
- Volume
- 36
- Issue
- 2
- Pages
- 399-402
- ISSN
- 0018-9383 (ISSN-L)
- OpenAlex
- W1992926203
- Cited by
- 916
- References
- 1
- FWCI
- 3.77
- Type
- journal article
- Language
- en
- Open access
- closed
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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
