The DOI matches its Crossref record.
Critical charge concepts for CMOS SRAMs
Abstract
The dramatic effects of external circuit loading on the heavy-ion-induced charge-collection response of a struck transistor are illustrated using three-dimensional mixed-mode simulations. Simulated charge-collection and SEU characteristics of a CMOS SRAM cell indicate that, in some cases, more charge call be collected at sensitive nodes from strikes that do not cause upset than from strikes that do cause upset. Computations of critical charge must take into account the time during which charge is collected, not simply the total amount of charge collected. Model predictions of the incident linear energy transfer required to cause upset agree well with measured data for CMOS SRAMs, without parameter adjustments. The results show the absolute necessity of treating circuit effects in any realistic device simulation of single-event upset (SEU) in SRAMs.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cited by
Radiation-induced soft errors in advanced semiconductor technologies
Baumann, R. C. (2005) · IEEE Transactions on Device and Materials Reliability · doi:10.1109/tdmr.2005.853449 · Cited by 1,549
Soft error rate mitigation techniques for modern microcircuits
Mavis, D. G., & Eaton, P. H. (2003) · 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) · doi:10.1109/relphy.2002.996639 · Cited by 369
Metadata
- Authors
- Dodd, P. E., & Sexton, F. W.
- Venue
- IEEE Transactions on Nuclear Science
- Published
- 1995-12
- Volume
- 42
- Issue
- 6
- Pages
- 1764-1771
- ISSN
- 0018-9499 (ISSN-L)
- 1558-1578
- OpenAlex
- W2138111642
- Cited by
- 168
- References
- 0
- FWCI
- 5.75
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: Critical charge concepts for CMOS SRAMs. https://app.cochat.ai/papers/10.1109/23.488777
- The paper
- Dodd, P. E., & Sexton, F. W. (1995). Critical charge concepts for CMOS SRAMs. IEEE Transactions on Nuclear Science. https://doi.org/10.1109/23.488777
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
