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Analysis of semiconductor microcavity lasers using rate equations

Bjork, G., Yamamoto, Y.·1991·IEEE Journal of Quantum Electronics

Abstract

The rate equations for a microcavity semiconductor laser are solved and the steady-state behavior of the laser and some of its dynamic characteristics are investigated. It is shown that by manipulating the mode density and the spontaneous decay rates of the cavity modes, the threshold gain can be decreased and the modulation speed can be improved. However, in order to fully exploit the possibilities which the modification of the spontaneous decay opens up, the active material volume in the cavity must be smaller than a certain value. Threshold current using different definitions, population inversion factor, L-I curves, linewidth, and modulation response are discussed.>

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Metadata

Authors
Bjork, G., & Yamamoto, Y.
Venue
IEEE Journal of Quantum Electronics
Published
1991
Volume
27
Issue
11
Pages
2386-2396
ISSN
0018-9197 (ISSN-L)
OpenAlex
W2053193951
Cited by
404
References
0
FWCI
14.29
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Analysis of semiconductor microcavity lasers using rate equations. https://app.cochat.ai/papers/10.1109/3.100877
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Bjork, G., & Yamamoto, Y. (1991). Analysis of semiconductor microcavity lasers using rate equations. IEEE Journal of Quantum Electronics. https://doi.org/10.1109/3.100877

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