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Cited by 1,144

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On-chip spiral inductors with patterned ground shields for Si-based RF ICs

Yue, C.P., Wong, S.S.·1998·IEEE Journal of Solid-State Circuits

Abstract

This paper presents a patterned ground shield inserted between an on-chip spiral inductor and silicon substrate. The patterned ground shield can be realized in standard silicon technologies without additional processing steps. The impacts of shield resistance and pattern on inductance, parasitic resistances and capacitances, and quality factor are studied extensively. Experimental results show that a polysilicon patterned ground shield achieves the most improvement. At 1-2 GHz, the addition of the shield increases the inductor quality factor up to 33% and reduces the substrate coupling between two adjacent inductors by as much as 25 dB. We also demonstrate that the quality factor of a 2-GHz LC tank can be nearly doubled with a shielded inductor.

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Metadata

Authors
Yue, C. P., & Wong, S. S.
Venue
IEEE Journal of Solid-State Circuits
Published
1998-05
Volume
33
Issue
5
Pages
743-752
ISSN
0018-9200 (ISSN-L)
OpenAlex
W2167004581
Cited by
1,144
References
0
FWCI
30.15
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: On-chip spiral inductors with patterned ground shields for Si-based RF ICs. https://app.cochat.ai/papers/10.1109/4.668989
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Yue, C. P., & Wong, S. S. (1998). On-chip spiral inductors with patterned ground shields for Si-based RF ICs. IEEE Journal of Solid-State Circuits. https://doi.org/10.1109/4.668989

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.