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Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

Kuball, M., Hayes, J.M., Uren, M.J., Martin, I., Birbeck, J.C.H., Balmer, R.S., Hughes, B.T.·2002·IEEE Electron Device Letters

Abstract

We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with /spl ap/1 μm spatial resolution and a temperature accuracy of better than 10/spl deg/C. Significant temperature rises up to 180/spl deg/C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had /spl sim/5 times lower thermal resistance.

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Metadata

Authors
Kuball, M., Hayes, J. M., Uren, M. J., Martin, I., Birbeck, J. C. H., Balmer, R. S., & Hughes, B. T.
Venue
IEEE Electron Device Letters
Published
2002-01
Volume
23
Issue
1
Pages
7-9
ISSN
  • 0741-3106 (ISSN-L)
  • 1558-0563
OpenAlex
W2103125572
Cited by
358
References
0
FWCI
12.15
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy. https://app.cochat.ai/papers/10.1109/55.974795
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Kuball, M., Hayes, J. M., Uren, M. J., Martin, I., Birbeck, J. C. H., Balmer, R. S., & Hughes, B. T. (2002). Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy. IEEE Electron Device Letters. https://doi.org/10.1109/55.974795

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