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Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
Abstract
We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with /spl ap/1 μm spatial resolution and a temperature accuracy of better than 10/spl deg/C. Significant temperature rises up to 180/spl deg/C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had /spl sim/5 times lower thermal resistance.
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Cited by
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Graphene quilts for thermal management of high-power GaN transistors
Yan, Z., Liu, G., Khan, J. M., & Balandin, A. A. (2012) · Nature Communications · doi:10.1038/ncomms1828 · Cited by 543
Sarua, A., Ji, H., Kuball, M., Uren, M. J., Martin, T., Hilton, K. P., & Balmer, R. S. (2006) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2006.882274 · Cited by 267
Self-citationMonolithic Integrated Micro-Thin-Film Thermocouples for On-Chip Temperature Measurement of GaN HEMTs
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Metadata
- Authors
- Kuball, M., Hayes, J. M., Uren, M. J., Martin, I., Birbeck, J. C. H., Balmer, R. S., & Hughes, B. T.
- Venue
- IEEE Electron Device Letters
- Published
- 2002-01
- Volume
- 23
- Issue
- 1
- Pages
- 7-9
- ISSN
- 0741-3106 (ISSN-L)
- 1558-0563
- OpenAlex
- W2103125572
- Cited by
- 358
- References
- 0
- FWCI
- 12.15
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kuball, M., Hayes, J. M., Uren, M. J., Martin, I., Birbeck, J. C. H., Balmer, R. S., & Hughes, B. T. (2002). Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy. IEEE Electron Device Letters. https://doi.org/10.1109/55.974795
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