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Cited by 458

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Recent developments of high power converters for industry and traction applications

Bernet, S.·2000·IEEE Transactions on Power Electronics

Abstract

The introduction of new high power devices like integrated gate commutated thyristors (IGCTs) and high voltage insulated gate bipolar transistors (IGBTs) accelerates the broad use of pulse width modulation (PWM) voltage source converters in industrial and traction applications. This paper summarizes the state-of-the-art of power semiconductors. The characteristics of IGCTs and high voltage IGBTs are described in detail. Both the design and loss simulations of a two level 1.14 MVA voltage source inverter and a 6 MVA three-level neutral point clamped voltage source converter with active front end enable a detailed comparison of both power semiconductors for high power PWM converters. The design and the characteristics of a commercially available IGCT neutral point clamped PWM voltage source converter for medium voltage drives are discussed. Recent developments and trends of traction converters at DC mains and AC mains are summarized.

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Metadata

Authors
Bernet, S.
Venue
IEEE Transactions on Power Electronics
Published
2000-11
Volume
15
Issue
6
Pages
1102-1117
ISSN
  • 0885-8993 (ISSN-L)
  • 1941-0107
OpenAlex
W2124703932
Cited by
458
References
2
FWCI
8.66
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Recent developments of high power converters for industry and traction applications. https://app.cochat.ai/papers/10.1109/63.892825
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Bernet, S. (2000). Recent developments of high power converters for industry and traction applications. IEEE Transactions on Power Electronics. https://doi.org/10.1109/63.892825

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