Student or educator? Sign up with your school email and get 6 months of Pro free.
CoChat
Sign Up
Cited by 59

The DOI matches its Crossref record.

Active compensation of current unbalance in paralleled silicon carbide MOSFETs

Xue, Yang, Lu, Junjie, Wang, Zhiqiang, Tolbert, Leon M., Blalock, Benjamin J., Wang, Fred·2014·2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014
DOI 10.1109/apec.2014.6803501
Open this paper in CoChat — free account

Abstract

Current unbalance in paralleled power electronic devices can affect the performance and reliability of them. In this paper, the factors causing current unbalance in parallel connected silicon carbide (SiC) MOSFETs are analyzed, and the threshold mismatch is identified as the major factor. Then the distribution and temperature dependence of SiC MOSFETs' threshold voltage are studied experimentally. Based on the analysis and study, an active current balancing (ACB) scheme is presented. The scheme directly measures the unbalance current, and eliminates it in closed loop by varying the gate delay to each device. The turn-on and turn-off current unbalance are sensed and independently compensated to yield an optimal performance at both switching transitions. The proposed scheme provides robust compensation of current unbalance in fast-switching wide-band-gap devices while keeping circuit complexity and cost low. The performance of the proposed ACB scheme is verified by both simulation and experimental results.

Overview

Integrity signals

Registry

Crossref · 10.1109/apec.2014.6803501

Cites

Statistics

Recomputing p-values needs the paper’s full text.

Verification

Claims the paper makes

This paper’s full text isn’t openly available, so its claims and self-check weren’t run. The registry and citation checks still apply.

Claims other papers make about this one

Each is checked against this paper’s own text: does it say what the citing paper says it does?

Citations

Cites

No references could be resolved yet.

Research works printed but not linked: 12

  1. 10.1109/ECCE.2011.6064088 · DOI
  2. 10.1109/APEC.2011.5744728 · DOI
  3. 10.1109/TPS.2008.2003971 · DOI · Paper page
  4. 10.1109/TPEL.2012.2206611 · DOI
  5. lidow, 0, Paralleling EGaN FETs
  6. 0, Paralleling power MOSFETs, IR Application Note AN-941
  7. forsythe, 0, Paralleling of power MOSFETs for higher power output
  8. 10.1109/ISIE.2012.6237089 · DOI
  9. 10.1109/ECCE.2009.5316419 · DOI
  10. 10.1109/TPEL.2006.880356 · DOI
  11. 10.1109/ECCE.2011.6064173 · DOI · Paper page
  12. 10.1109/APEC.2013.6520216 · DOI · Paper page

Cited by

Metadata

Authors
Xue, Y., Lu, J., Wang, Z., Tolbert, L. M., Blalock, B. J., & Wang, F.
Venue
2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014
Publisher
IEEE
Published
2014-03
Pages
1471-1477
DOI
10.1109/apec.2014.6803501
Cited by
59
References
0

About these checks

Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.

What counts as a claim ›How we measure confidence ›How we check this ›

Are you an author, or do you see a problem with this page? Request a review

Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.