Cited by 40Silicon Carbide Semiconductor TechnologiesReliability and Maintenance OptimizationMultilevel Inverters and Converters

Review of SiC MOSFET based three-phase inverter lifetime prediction

Ni, Ze, Lyu, Xiaofeng, Yadav, Om Prakash, Cao, Dong·2017·2017 IEEE Applied Power Electronics Conference and Exposition (APEC)

Abstract

This paper presents a review on SiC MOSFET based 3-phase inverter lifetime prediction. The inverter-level lifetime prediction flowchart is first illustrated with the system failure rate and system Mean Time to Failure derived which integrate five in-series stresses. An overview of SiC MOSFET power module Physics-of-Failure is then presented. Following it are the step-by-step lifetime modeling comparison and summarization, including power loss analysis, thermal modeling, thermal-mechanical modeling, and damage accumulation modeling. Furthermore, cycle counting algorithms and active power cycling tests specific to SiC MOSFET are discussed. Finally, a detailed system-level thermal profile extraction from SiC MOSFET based 3-phased inverter in the hybrid electrical vehicle application is conducted. The simulation result is consistent with theoretical power loss and thermal equivalent circuit based junction temperature evaluation. Thus it can be used for further system lifetime modeling and the reference for 3-phase inverter based power cycling tests in SPWM mode.

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Crossref · 10.1109/apec.2017.7930819

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  • Ensuring long-term reliability and accurately forecasting operational lifespan of WBG semiconductors such as SiC and GaN remain critical challenges.

    “While the advantages of WBG semiconductors such as SiC and GaN are well established, ensuring their long-term reliability and accurately forecasting their operational lifespan remain critical challenges [1,2,59].”

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References 87 · Cited by 40

Authors
Ni, Z., Lyu, X., Yadav, O. P., & Cao, D.
Affiliations
North Dakota State University (US)
Venue
2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
Publisher
IEEE
Published
2017-03
Pages
1007-1014
ISSN
1048-2334 (ISSN-L)
OpenAlex
W2615594463
Cited by
40
References
87
Citations by year
2026: 3 · 2025: 7 · 2024: 4 · 2023: 1 · 2022: 3 · 2021: 5 · 2020: 3 · 2019: 3 · 2018: 10 · 2017: 1
FWCI
6.58
Type
conference paper
Language
en
Open access
closed
Locations
Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
  • Physical Sciences › Engineering › Safety, Risk, Reliability and Quality › Reliability and Maintenance Optimization
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
Keywords
SiC MOSFET, three-phase inverter, lifetime prediction, physics of failure, power module reliability, mean time to failure, power loss analysis, thermal modeling, thermomechanical modeling, power cycling test, hybrid electric vehicles, junction temperature, sinusoidal pulse width modulation

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