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Cited by 19

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Current Balancing for Parallel Connection of Silicon Carbide MOSFETs Using Bus Bar Integrated Magnetic Material

Matsubara, Kazuki, Wada, Keiji·2019·2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
DOI 10.1109/apec.2019.8721777
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Abstract

Power converter circuits are becoming widespread, and higher-voltage and larger-current converter circuits are increasingly used in automotive and utility applications. In particular, research and development on silicon carbide(SiC) power devices are being actively pursued for achieving larger current ratings by connecting SiC power modules in parallel. However, a current imbalance phenomenon may occur in the parallel-connected power modules because of the difference in device characteristics and parasitic impedances. This paper proposes a practical current balancing method for parallel-connected power modules based on only circuit implementations. In addition, a laminated bus bar integrated magnetic material for current balancing in parallel-connected MOSFET modules is proposed based on the analysis results. The validity of the proposed method is clarified through experiments using SiC-MOSFET.

Overview

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Crossref · 10.1109/apec.2019.8721777

Cites

1 of 1 references verified0 citation errors · 0 not checkable

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Recomputing p-values needs the paper’s full text.

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Citations

Cites

Research works printed but not linked: 17

  1. 10.1109/TPS.2008.2003971 · DOI · Paper page
  2. 10.1109/APEC.2013.6520216 · DOI · Paper page
  3. 10.1109/ECCE.2011.6064173 · DOI · Paper page
  4. 10.1109/TIE.2017.2716868 · DOI
  5. 0, Digikey SiC power modules
  6. 0, SiC modules
  7. 10.1109/JESTPE.2016.2638019 · DOI
  8. 10.1109/IPEC.2010.5543360 · DOI
  9. 0, Information of Toroidal core
  10. 10.1541/ieejjia.6.258 · DOI
  11. 10.1109/TIA.2015.2456422 · DOI
  12. 10.1109/EPE.2015.7309165 · DOI
  13. 10.1541/ieejjia.7.35 · DOI
  14. 10.1109/APEC.2018.8341422 · DOI
  15. fabre, 2016, Parallel Connection of 1200-V/100-A SiC-MOSFET Half-Bridge Modules, IEEE Transactions on Electrical and Electronic Engineering, 52, 1669
  16. 10.1109/ESARS.2015.7101514 · DOI
  17. 10.1109/ECCE.2009.5316038 · DOI

Cited by

See all 19

Metadata

Authors
Matsubara, K., & Wada, K.
Venue
2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
Publisher
IEEE
Published
2019-03
Pages
2688-2693
DOI
10.1109/apec.2019.8721777
Cited by
19
References
1
Licence

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Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.

Statistics and arithmetic are recomputed, not judged.

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Data sources

Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.