The DOI matches its Crossref record.
Transconductance of Silicon-on-insulator (SOI) MOSFET's
Abstract
Transconductance of n-channel Silicon-on-Insulator (SOI) MOSFET's has been measured with backside gate (substrate) bias as a parameter. For negative values of the backside gate bias, transconductance of SOI transistors is similar to that of bulk devices. On the other hand, transconductance exhibits an unusual behavior when backside gate is positively biased. This is caused by mutual influence between the front-and the backside gate-related depletion zones. Modeling of transconductance using numerical solution of Poisson's equation show good agreement with experimental results.
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In the citing paper
“The other peculiar point in the plot is the shape of the leakage currents; they are randomly fluctuated with thin secondary inverted carriers20; this indicates that parallel shifts do not occur, with the secondary potential changes at regular intervals.”
From Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body (2014) · cites this paper as [20]
In the citing paper
“The other peculiar point in the plot is the shape of the leakage currents; they are randomly fluctuated with thin secondary inverted carriers20; this indicates that parallel shifts do not occur, with the secondary potential changes at regular intervals.”
From Performance Enhancement of Capacitive-Coupling Dual-gate Ion-Sensitive Field-Effect Transistor in Ultra-Thin-Body (2014) · cites this paper as [20]
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Jang, H.-J., & Cho, W.-J. (2014) · Scientific Reports · doi:10.1038/srep05284 · Cited by 103
Metadata
- Authors
- Colinge, J.-P.
- Affiliations
- Hewlett-Packard (United States) (US)
- Corresponding author
- Colinge, J.-P.
- Venue
- IEEE Electron Device Letters
- Published
- 1985-11
- Volume
- 6
- Issue
- 11
- Pages
- 573-574
- ISSN
- 0741-3106 (ISSN-L)
- OpenAlex
- W2035498184
- Cited by
- 41
- References
- 0
- Citations by year
- 2025: 1 · 2023: 1 · 2021: 1 · 2020: 3 · 2019: 1 · 2018: 2 · 2016: 1 · 2015: 1 · 2014: 2 · 2013: 1 · 2012: 2
- FWCI
- 2.70
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- IEEE Electron Device Letters (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Photonic and Optical Devices
- Keywords
- transconductance, silicon-on-insulator MOSFET, substrate bias, n-channel MOSFET, depletion region
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