The DOI matches its Crossref record; 10 of the 10 references it cites were found in a registry or an index.
On the Performance Limit of Impact-Ionization Transistors
Abstract
The trade-off between off-state leakage current and switching delay for impact-ionization MOS transistor (I-MOS) is pointed out and studied for the first time. This trade-off is unique for I-MOS devices, and is related to the self-amplifying carrier multiplication, the exact phenomenon used to be viewed as a merit. Monte-Carlo simulation is performed to study the random process of carrier multiplication in I-MOS, and the physical limit to the transistor switching delay is assessed. We found that at leakage constraints of 0.1muA/mum, silicon I-MOS shows long intrinsic switch-on delay (>10ps) and large random delay variance, hence does not show advantage in the delay/leakage trade-off compared to CMOS devices.
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“The random charging is attributed to random carrier generation dominated by the random number of collision events during impact ionization near D (37, 38), and the accidental discharging is ascribed to random carrier escapes led by out-diffusion from the FB to S.”
From Cryptographic transistor for true random number generator with low power consumption (2024) · cites this paper as [37]
Citations
Cites
The physics of semiconductor devices
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A Proposed High-Frequency, Negative-Resistance Diode
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Impact ionization model for full band Monte Carlo simulation
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Superfast fronts of impact ionization in initially unbiased layered semiconductor structures
Rodin, P. B., Ebert, U., Hundsdorfer, W., et al. (2002) · Journal of Applied Physics · doi:10.1063/1.1494113 · Cited by 48
Rodin, P. B., Rodina, A. V., & Grekhov, I. V. (2005) · Journal of Applied Physics · doi:10.1063/1.2125118 · Cited by 38
Minority carrier storage and oscillation efficiency in read diodes
Misawa, T. (1970) · Solid-State Electronics · doi:10.1016/0038-1101(70)90170-x · Cited by 32
I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering
Toh, E.-H., Wang, G. H., Chan, L., et al. (2006) · IEEE Electron Device Letters · doi:10.1109/led.2006.886708 · Cited by 30
Self-citationSubmillimeter Wave Sip+-p-n+IMPATT Diodes
Ino, M., Ishibashi, T., & Ohmori, M. (1977) · Japanese Journal of Applied Physics · doi:10.7567/jjaps.16s1.89 · Cited by 7
Flagged first, then by citations
Research works printed but not linked: 8
- grekhov, 1982, Sov Phys Semicond, 16, 1276
- misawa, 1966, T-ED, 13, 137
- choi, 2004, IEDM
- shen, 2007, SSDM
- duncan, 1998, T-ED, 45, 867
- nirschl, 2004, IEDM, 195
- gopalakrishnan, 2002, IEDM, 289
- cartier, 1993, J Appl Phys, 62, 3339
Cited by
Sorted by citations
Cryptographic transistor for true random number generator with low power consumption
Kim, S.-I., You, H.-J., Kim, M.-S., An, U.-S., Kim, M.-S., Lee, D. H., Ryu, S.-T., & Choi, Y.-K. (2024) · Science Advances · doi:10.1126/sciadv.adk6042 · Cited by 33
“The random charging is attributed to random carrier generation dominated by the random number of collision events during impact ionization near D ( 37 , 38 ), and the accidental discharging is ascribed to random carrier escapes led by out-diffusion from the FB to S.”
Metadata
- Authors
- Shen, C., Lin, J.-Q., Toh, E.-H., Chang, K.-F., Bai, P., Heng, C.-H., Samudra, G. S., & Yeo, Y.-C.
- Affiliations
- National University of Singapore (SG)
- Institute of High Performance Computing (SG)
- Venue
- 2007 IEEE International Electron Devices Meeting
- Publisher
- IEEE
- Published
- 2007-12
- Pages
- 117-120
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W2054690398
- Cited by
- 15
- References
- 10
- Citations by year
- 2026: 1 · 2024: 2 · 2017: 1 · 2016: 2 · 2014: 2 · 2013: 1 · 2012: 1
- FWCI
- 2.01
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- Technical digest - International Electron Devices Meeting/Technical digest (publishedVersion)
- National University of Singapore (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advancements in Semiconductor Devices and Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Low-power high-performance VLSI design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- off-state leakage current, switching delay, carrier multiplication, performance bounds, CMOS comparison
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