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A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
Abstract
We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory windows of 1.5 V are demonstrated in aggressively scaled FeFET cells with an area as small as 0.025 μm2At this point program/erase endurance cycles up to 105are supported. Complex pattern are written into 32 MBit arrays using ultrafast program/erase pulses in a 10 ns range at 4.2 V. High temperature retention up to 300 °C is achieved. It makes FeFET based eNVM a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.
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Cited by
The Past, the Present, and the Future of Ferroelectric Memories
Mikolajick, T., Schroeder, U., & Slesazeck, S. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2976148 · Cited by 486
Self-citationNing, H., Yu, Z., Zhang, Q., Wen, H., Gao, B., Mao, Y., Li, Y., Zhou, Y., Zhou, Y., Chen, J., et al. (2023) · Nature Nanotechnology · doi:10.1038/s41565-023-01343-0 · Cited by 198
Chakraborty, I., Ali, M., Ankit, A., Jain, S., Roy, S., Sridharan, S., Agrawal, A., Raghunathan, A., & Roy, K. (2020) · Proceedings of the IEEE · doi:10.1109/jproc.2020.3003007 · Cited by 140
Metadata
- Authors
- Dunkel, S., Trentzsch, M., Richter, R., Moll, P., Fuchs, C., Gehring, O., Majer, M., Wittek, S., Muller, B., Melde, T., Mulaosmanovic, H., Slesazeck, S., Muller, S., Ocker, J., Noack, M., Lohr, D.-A., Polakowski, P., Muller, J., Mikolajick, T., Hontschel, J., Rice, B., Pellerin, J., & Beyer, S.
- Venue
- 2017 IEEE International Electron Devices Meeting (IEDM)
- Publisher
- IEEE
- Published
- 2017-12
- Pages
- 19.7.1-19.7.4
- ISSN
- 0163-1918 (ISSN-L)
- OpenAlex
- W2786159202
- Cited by
- 540
- References
- 0
- FWCI
- 50.20
- Type
- conference paper
- Language
- en
- Open access
- closed
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- The paper
- Dunkel, S., Trentzsch, M., Richter, R., Moll, P., Fuchs, C., Gehring, O., Majer, M., Wittek, S., Muller, B., Melde, T., Mulaosmanovic, H., Slesazeck, S., Muller, S., Ocker, J., Noack, M., Lohr, D.-A., Polakowski, P., Muller, J., Mikolajick, T., . . . Beyer, S. (2017). A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond. 2017 IEEE International Electron Devices Meeting (IEDM). https://doi.org/10.1109/iedm.2017.8268425
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
