The DOI matches its Crossref record; 7 of the 7 references it cites were found in a registry or an index.
Direct liquid cooling of high performance Silicon Carbide (SiC) power modules
Abstract
Silicon Carbide (SiC) wide band gap power devices are capable of operating at extremely high current densities and switching frequencies. Systems embracing these benefits can achieve a substantial increase in power density. However, cooling becomes exponentially more difficult as the size of the modules lessens. Direct cooling of the power electronic modules, in which the liquid coolant flows over the surfaces of the base plate, is a highly effective approach to improve the thermal performance of a conversion system. Notably, it allows for a reduction of layers in the thermal stack-up and completely eliminates the need for a thermal interface material (TIM). In this work, Wolfspeed has taken the commercial CAS325M12HM2 SiC power module, which was specifically designed to take advantage of wide band gap power semiconductors, and developed a prototype variant to enable direct liquid cooling of the base plate. High surface area pin fins are formed in a concentrated density directly on the base plate, providing a quality means of heat removal as close to the semiconductor devices as possible. High thermal conductivity materials and attaches, including silver sintering paste and film, were utilized to achieve an optimized heat transfer path. The discussion presents the design, analysis, and testing of this direct cooled module. It focuses on various physical factors influencing the thermal performance and a comparison between different direct structural configurations and power levels.
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“Direct liquid cooling improves heat removal by bringing coolant into direct contact with the chip or substrate surface, thereby reducing TBR and increasing heat-transfer efficiency [29,50,51].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [50]
Citations
Cites
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Laloya, E., Lucía, Ó., Sarnago, H., & Burdio, J. M. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2513433 · Cited by 187
An overview of Cree silicon carbide power devices
Richmond, J., Ryu, S., Das, M. K., et al. (2005) · doi:10.1109/pet.2004.1393789 · Cited by 59
Advanced Cooling for Power Electronics
Kang (2012) · Cited by 50
Advanced Cooling for Power Electronics
Kang, S. S. (2012) · Cited by 46
Akimoto, H., Anoda, Y., Takase, K., et al. (2016) · An advanced course in nuclear engineering · doi:10.1007/978-4-431-55603-9_15 · Cited by 19
Horiuchi, K., Nishihara, A., Mori, M., et al. (2013) · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · doi:10.1109/ispsd.2013.6694407 · Cited by 4
Research works printed but not linked: 1
- reeves, 2016, Pushing the limits of liquid cooling: Design and analysis of a direct liquid cooling system for power modules, Conference on Power Conversion Intelligent Motion (PCIM) Nuremberg
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Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
Egin Martin, G., Verbrugge, B., Mahedi Hasan, M., El Baghdadi, M., Romano, C., & Hegazy, O. (2025) · IEEE Access · doi:10.1109/access.2025.3612315 · Cited by 8
“This architecture significantly reduces thermal resistance, enhancing cooling efficiency and eliminating additional thermal barriers [41].”
Metadata
- Authors
- McPherson, B., McGee, B., Simco, D., Olejniczak, K., & Passmore, B.
- Affiliations
- Wolfspeed, Inc. (United States) (US)
- ORCID
- Passmore, Brandon
- Venue
- 2017 IEEE International Workshop On Integrated Power Packaging (IWIPP)
- Publisher
- IEEE
- Published
- 2017-04
- Pages
- 1-5
- OpenAlex
- W2620660814
- Cited by
- 29
- References
- 7
- Citations by year
- 2026: 2 · 2025: 7 · 2024: 9 · 2023: 1 · 2022: 5 · 2021: 2 · 2020: 1 · 2018: 2
- FWCI
- 1.16
- Type
- conference paper
- Language
- en
- Open access
- closed
- Locations
- IEEE International Workshop on Integrated Power Packaging (IWIPP) (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Mechanical Engineering › Heat Transfer and Optimization
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- silicon carbide power modules, direct liquid cooling, wide bandgap semiconductors, thermal management, pin fins, thermal interface materials, thermal conductivity, power density, heat removal
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