The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices
Abstract
Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due to their superior characteristics compared to their Si counterparts. However, their fast switching speed and the ability to operate at high frequencies brought new challenges, among which the electromagnetic interference (EMI) is one of the major concerns. Many works investigated the structures of WBG power devices and their switching performance. In some cases, the conductive or radiated EMI was measured. However, the EMI-related topics, including their influence on noise sources, noise propagation paths, EMI reduction techniques, and EMC reliability issues, have not yet been systematically summarized for WBG devices. In this article, the literature on EMI research in power electronics systems with WBG devices is reviewed. Characteristics of WBG devices as EMI noise sources are reviewed. EMI propagation paths, near-field coupling, and radiated EMI are surveyed. EMI reduction techniques are categorized and reviewed. Specifically, the EMI-related reliability issues are discussed, and solutions and guidelines are presented.
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Cites
A Survey of Wide Bandgap Power Semiconductor Devices
Millán, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A., & Rebollo, J. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2268900 · Cited by 2,685 · cited 2×
“At the same time, wide-bandgap (WBG) semiconductor materials, including silicon carbide (SiC) and gallium nitride (GaN) [1], have presented multiple advantages over Si.”
BackgroundReview of Silicon Carbide Power Devices and Their Applications
She, X., Huang, A. Q., Lucia, O., & Ozpineci, B. (2017) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2652401 · Cited by 1,773
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
Jones, E. A., Wang, F. F., & Costinett, D. (2016) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2016.2582685 · Cited by 1,259
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Morya, A. K., Gardner, M. C., Anvari, B., Liu, L., Yepes, A. G., Doval-Gandoy, J., & Toliyat, H. A. (2019) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2019.2892807 · Cited by 444
Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs
Li, H., Munk-Nielsen, S., Wang, X., Maheshwari, R., Beczkowski, S., Uhrenfeldt, C., & Franke, W.-T. (2016) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2408054 · Cited by 306
Cited by
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
Metadata
- Authors
- Zhang, B., & Wang, S.
- Venue
- IEEE Journal of Emerging and Selected Topics in Power Electronics
- Published
- 2020-03
- Volume
- 8
- Issue
- 1
- Pages
- 626-643
- ISSN
- 2168-6777 (ISSN-L)
- 2168-6785
- OpenAlex
- W2989347382
- Cited by
- 367
- References
- 5
- FWCI
- 9.52
- Type
- journal article
- Language
- en
- Open access
- closed
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