Cited by 147Advanced Memory and Neural ComputingPhysical Unclonable Functions (PUFs) and Hardware SecurityFerroelectric and Negative Capacitance Devices

True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices

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Balatti, Simone, Ambrogio, Stefano, Wang, Zhongqiang, Ielmini, Daniele·2015·IEEE Journal on Emerging and Selected Topics in Circuits and Systems

Abstract

Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.

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Crossref · 10.1109/jetcas.2015.2426492

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  • Compared with previous TRNGs based on non-volatile memristors, the self-OFF-switching behavior in the diffusive memristor greatly reduces energy consumption because no RESET process is required.

    “Compared with previous TRNGs based on non-volatile memristors30, 31, the self-OFF-switching behavior in the diffusive memristor greatly reduces the energy consumption since no RESET process is required.”
  • Most previous approaches utilizing switching variations to build TRNGs have defined a threshold value for some switching characteristic (e.g., SET voltage or read current).

    “Most previous approaches utilizing switching variations to build TRNGs have defined a threshold value for some switching characteristic (for example, SET voltage30 or read current39).”

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References 24 · Cited by 147

Authors
Balatti, S., Ambrogio, S., Wang, Z., & Ielmini, D.
Affiliations
Politecnico di Milano (IT)
Venue
IEEE Journal on Emerging and Selected Topics in Circuits and Systems
Published
2015-06
Volume
5
Issue
2
Pages
214-221
ISSN
  • 2156-3357 (ISSN-L)
  • 2156-3365
OpenAlex
W1982630937
Cited by
147
References
24
Citations by year
2026: 5 · 2025: 11 · 2024: 17 · 2023: 14 · 2022: 11 · 2021: 16 · 2020: 19 · 2019: 14 · 2018: 14 · 2017: 12 · 2016: 14
FWCI
6.43
Type
journal article
Language
en
Open access
Locations
  • IEEE Journal on Emerging and Selected Topics in Circuits and Systems (publishedVersion)
  • Virtual Community of Pathological Anatomy (University of Castilla La Mancha) (submittedVersion, other-oa)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
Keywords
true random number generation, resistive random access memory, random telegraph noise, CMOS inverter, encryption

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