True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices
Open accessAbstract
Scalable, low-power random number generator (RNG) blocks are essential for encryption in today's communication systems. To allow for true RNG, a system must display an inherently-random physical phenomenon, such as the timing of individual fluctuations in random telegraph noise or the random trapping/detrapping phenomena in dielectrics. In this work, a true RNG based on set variability in a resistive switching memory (RRAM) is demonstrated. The RNG relies on a single RRAM device, which is repeatedly programmed at a constant voltage close to the nominal set voltage. Due to the statistical variability of the set voltage, set transition takes place only in 50% of the applied pulses, thus resulting in a bimodal distribution of resistance. The bimodal distribution of analog resistance is finally converted into a 0/1 distribution of output voltage values through digital regeneration with a CMOS inverter.
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Compared with previous TRNGs based on non-volatile memristors, the self-OFF-switching behavior in the diffusive memristor greatly reduces energy consumption because no RESET process is required.
“Compared with previous TRNGs based on non-volatile memristors30, 31, the self-OFF-switching behavior in the diffusive memristor greatly reduces the energy consumption since no RESET process is required.”
From A novel true random number generator based on a stochastic diffusive memristor (2017) · cites this paper as [30]
Most previous approaches utilizing switching variations to build TRNGs have defined a threshold value for some switching characteristic (e.g., SET voltage or read current).
“Most previous approaches utilizing switching variations to build TRNGs have defined a threshold value for some switching characteristic (for example, SET voltage30 or read current39).”
From A novel true random number generator based on a stochastic diffusive memristor (2017) · cites this paper as [30]
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References 24 · Cited by 147
- Authors
- Balatti, S., Ambrogio, S., Wang, Z., & Ielmini, D.
- Affiliations
- Politecnico di Milano (IT)
- Venue
- IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- Published
- 2015-06
- Volume
- 5
- Issue
- 2
- Pages
- 214-221
- ISSN
- 2156-3357 (ISSN-L)
- 2156-3365
- OpenAlex
- W1982630937
- Cited by
- 147
- References
- 24
- Citations by year
- 2026: 5 · 2025: 11 · 2024: 17 · 2023: 14 · 2022: 11 · 2021: 16 · 2020: 19 · 2019: 14 · 2018: 14 · 2017: 12 · 2016: 14
- FWCI
- 6.43
- Type
- journal article
- Language
- en
- Open access
- green
- hdl.handle.net
- Locations
- IEEE Journal on Emerging and Selected Topics in Circuits and Systems (publishedVersion)
- Virtual Community of Pathological Anatomy (University of Castilla La Mancha) (submittedVersion, other-oa)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Computer Science › Hardware and Architecture › Physical Unclonable Functions (PUFs) and Hardware Security
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Keywords
- true random number generation, resistive random access memory, random telegraph noise, CMOS inverter, encryption
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