The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
Reduction of lasing threshold current density by the lowering of valence band effective mass
Abstract
In present day semiconductor lasers, there is a serious asymmetry between the very light conduction band mass and the very heavy valence band mass. Under laser threshold conditions, the hole occupation remains classical even while the electrons are degenerate. This results in a significant penalty in terms of threshold current density, carrier injection level, and excess Auger and other nonradiative recombination. We propose a combination of strain and quantum confinement to reduce the valence band effective mass and to lessen the laser threshold requirements.
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Cites
Physics of Semiconductor Devices: Proceedings of the Fourth International Workshop
JAIN, S. C., & RADHAKRISHNA, S. (1987) · Physics of Semiconductor Devices · doi:10.1142/9789814542012 · Cited by 4,151
Wales, J. (1971) · Physics Bulletin · doi:10.1088/0031-9112/22/4/016 · Cited by 647
Hensel, J. C., & Feher, G. (1963) · Physical Review · doi:10.1103/physrev.129.1041 · Cited by 464
Sanders, G. D., & Chang, Y. (1985) · Physical review. B, Condensed matter · doi:10.1103/physrevb.32.4282 · Cited by 79
Absorption, emission, and gain spectra of 1.3 µm InGaAsP quaternary lasers
HENRY, C. H., Logan, R. A., Temkin, H., & Merritt, F. R. (1983) · IEEE Journal of Quantum Electronics · doi:10.1109/jqe.1983.1071955 · Cited by 44
Cited by
Price, M. B., Butkus, J., Jellicoe, T. C., Sadhanala, A., Briane, A., Halpert, J. E., Broch, K., Hodgkiss, J. M., Friend, R. H., & Deschler, F. (2015) · Nature Communications · doi:10.1038/ncomms9420 · Cited by 704
System-on-Chip Photonic Integrated Circuits
Kish, F., Lal, V., Evans, P., Corzine, S. W., Ziari, M., Butrie, T., Reffle, M., Tsai, H.-S., Dentai, A., Pleumeekers, J., et al. (2018) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/jstqe.2017.2717863 · Cited by 168
Metadata
- Authors
- Yablonovitch, E., & Kane, E.
- Venue
- Journal of Lightwave Technology
- Published
- 1986
- Volume
- 4
- Issue
- 5
- Pages
- 504-506
- ISSN
- 0733-8724 (ISSN-L)
- OpenAlex
- W1984521470
- Cited by
- 451
- References
- 5
- FWCI
- 13.56
- Type
- journal article
- Language
- en
- Open access
- closed
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- Yablonovitch, E., & Kane, E. (1986). Reduction of lasing threshold current density by the lowering of valence band effective mass. Journal of Lightwave Technology. https://doi.org/10.1109/jlt.1986.1074751
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
