The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Magnetoresistive Random Access Memory
Abstract
In this paper, a review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.
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Cites
Thermal Fluctuations of a Single-Domain Particle
Brown, W. F. (1963) · Physical Review · doi:10.1103/physrev.130.1677 · Cited by 3,374
Cited by
Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene
Sharpe, A. L., Fox, E. J., Barnard, A. W., Finney, J., Watanabe, K., Taniguchi, T., Kastner, M. A., & Goldhaber-Gordon, D. (2019) · Science · doi:10.1126/science.aaw3780 · Cited by 1,723
Neuromorphic computing with nanoscale spintronic oscillators
Torrejon, J., Riou, M., Araujo, F. A., Tsunegi, S., Khalsa, G., Querlioz, D., Bortolotti, P., Cros, V., Yakushiji, K., Fukushima, A., et al. (2017) · Nature · doi:10.1038/nature23011 · Cited by 1,374
Opportunities and challenges for spintronics in the microelectronics industry
Dieny, B., Prejbeanu, I. L., Garello, K., Gambardella, P., Freitas, P., Lehndorff, R., Raberg, W., Ebels, U., Demokritov, S. O., Akerman, J., et al. (2020) · Nature Electronics · doi:10.1038/s41928-020-0461-5 · Cited by 1,040
Self-citationData for: Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene
Sharpe, A. L., Fox, E. J., Barnard, A., Finney, J., Watanabe, K., Taniguchi, T., Kastner, M. A., & Goldhaber‐Gordon, D. (2019) · Stanford Digital Repository · doi:10.25740/bg095cp1548 · Cited by 664
Two-dimensional materials prospects for non-volatile spintronic memories
Yang, H., Valenzuela, S. O., Chshiev, M., Couet, S., Dieny, B., Dlubak, B., Fert, A., Garello, K., Jamet, M., Jeong, D.-E., et al. (2022) · Nature · doi:10.1038/s41586-022-04768-0 · Cited by 447
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Metadata
- Authors
- Apalkov, D., Dieny, B., & Slaughter, J. M.
- Venue
- Proceedings of the IEEE
- Published
- 2016-10
- Volume
- 104
- Issue
- 10
- Pages
- 1796-1830
- ISSN
- 0018-9219 (ISSN-L)
- 1558-2256
- OpenAlex
- W3100863146
- Cited by
- 563
- References
- 1
- FWCI
- 21.59
- Type
- journal article
- Language
- en
- Open access
- closed
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- Apalkov, D., Dieny, B., & Slaughter, J. M. (2016). Magnetoresistive Random Access Memory. Proceedings of the IEEE. https://doi.org/10.1109/jproc.2016.2590142
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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