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Cited by 248

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Stability analysis for a semiconductor laser in an external cavity

Tromborg, B., Osmundsen, J., Olesen, H.·1984·IEEE Journal of Quantum Electronics

Abstract

A detailed theoretical analysis of stability is presented for a semiconductor laser in an external cavity. The limits of stable operation are determined as a function of the external cavity parameters and the linewidth enhancement factor α. Instability is related to jumps of the laser frequency between external cavity modes (frequency bistability) or to feedback-induced intensity pulsations due to the carrier density dependence of the refractive index. The limit of bistability is derived from the steady-state solutions of the rate equations and the intensity pulsation limit is obtained from a small-signal analysis. This analysis also gives the location of zeros in the system determinant and the resulting FM noise spectrum. For practical applications we emphasize the determination of the stable tuning range for the phase in the external cavity and the classification of the possible types of instability for various feedback levels.

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Metadata

Authors
Tromborg, B., Osmundsen, J., & Olesen, H.
Venue
IEEE Journal of Quantum Electronics
Published
1984-09
Volume
20
Issue
9
Pages
1023-1032
ISSN
0018-9197 (ISSN-L)
OpenAlex
W2035823729
Cited by
248
References
1
FWCI
13.60
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Stability analysis for a semiconductor laser in an external cavity. https://app.cochat.ai/papers/10.1109/jqe.1984.1072508
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Tromborg, B., Osmundsen, J., & Olesen, H. (1984). Stability analysis for a semiconductor laser in an external cavity. IEEE Journal of Quantum Electronics. https://doi.org/10.1109/jqe.1984.1072508

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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