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Electrooptical effects in silicon

Soref, R., Bennett, B.·1987·IEEE Journal of Quantum Electronics

Abstract

A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the1.0-2.0 \mum optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find\Delta n = 1.3 \times 10^{5}at\lambda = 1.07 \mum whenE = 10^{5}V/cm, while the Kerr effect gives\Delta n = 10^{-6}at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of\pm1.5 \times 10^{-3}at\lambda = 1.3 \mum.

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Metadata

Authors
Soref, R., & Bennett, B.
Venue
IEEE Journal of Quantum Electronics
Published
1987-01
Volume
23
Issue
1
Pages
123-129
ISSN
0018-9197 (ISSN-L)
OpenAlex
W2127282927
Cited by
2,605
References
0
FWCI
5.52
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Electrooptical effects in silicon. https://app.cochat.ai/papers/10.1109/jqe.1987.1073206
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Soref, R., & Bennett, B. (1987). Electrooptical effects in silicon. IEEE Journal of Quantum Electronics. https://doi.org/10.1109/jqe.1987.1073206

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