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Cited by 139

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Photonic Integration With Epitaxial III–V on Silicon

Liu, Alan Y., Bowers, John·2018·IEEE Journal of Selected Topics in Quantum Electronics
DOI 10.1109/jstqe.2018.2854542
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Abstract

We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III-V material on silicon-without the need for wafer bonding, or an externally coupled laser. Finally, a techno-economic analysis contrasting the aforementioned platforms will be presented.

Overview

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Crossref · 10.1109/jstqe.2018.2854542

Cites

2 of 2 references verified0 citation errors · 0 not checkable

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  • On-chip integration of tunable excitation laser sources can be naturally incorporated into the epitaxial growth process of the AlGaAs photonic layer.

    “the onchip integration of tunable excitation laser sources can be naturally incorporated into the epitaxial growth process of the AlGaAs photonic layer [36].”

    From Ultrabright Entangled-Photon-Pair Generation from anAlGaAs-On-Insulator Microring Resonator (2021) · cites this paper as [36]

Citations

Cites

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Metadata

Authors
Liu, A. Y., & Bowers, J.
ORCID
Venue
IEEE Journal of Selected Topics in Quantum Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2018-11
Volume
24
Issue
6
Pages
1-12
ISSN
  • 1077-260X
  • 1558-4542
DOI
10.1109/jstqe.2018.2854542
Cited by
139
References
2
Licence
ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)

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