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High-power AlGaN/GaN HEMTs for Ka-band applications
Open accessAbstract
We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). In devices with a gate length of 160 nm, a record power density of 10.5 W/mm with 34% power added efficiency (PAE) has been measured at 40 GHz in MOCVD-grown HEMTs biased at V/sub DS/=30 V. Under similar bias conditions, more than 8.6 W/mm, with 32% PAE, were obtained on the MBE-grown sample. The dependence of output power, gain, and PAE on gate and drain voltages, and frequency have also been analyzed.
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High electron mobility transistor based on a GaN-Al x Ga1−x N heterojunction
Asif Khan, M., Bhattarai, A., Kuznia, J. N., & Olson, D. T. (1993) · Applied Physics Letters · doi:10.1063/1.109775 · Cited by 911
Cited by
Hoo Teo, K., Zhang, Y., Chowdhury, N., Rakheja, S., Ma, R., Xie, Q., Yagyu, E., Yamanaka, K., Li, K., & Palacios, T. (2021) · Journal of Applied Physics · doi:10.1063/5.0061555 · Cited by 322
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Metadata
- Authors
- Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S. P., Speck, J. S., & Mishra, U. K.
- Venue
- IEEE Electron Device Letters
- Published
- 2005-11
- Volume
- 26
- Issue
- 11
- Pages
- 781-783
- ISSN
- 0741-3106 (ISSN-L)
- OpenAlex
- W2125864840
- Cited by
- 512
- References
- 1
- FWCI
- 17.07
- Type
- journal article
- Language
- en
- Open access
- green
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- Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S. P., Speck, J. S., & Mishra, U. K. (2005). High-power AlGaN/GaN HEMTs for Ka-band applications. IEEE Electron Device Letters. https://doi.org/10.1109/led.2005.857701
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