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Fast and low-power thermooptic switch on thin silicon-on-insulator

Espinola, R.L., Tsai, M.C., Yardley, J.T., Osgood, R.M.·2003·IEEE Photonics Technology Letters

Abstract

We have designed and fabricated Mach-Zehnder interferometer thermooptic switches using a wafer-bonded thin-silicon-on-insulator materials system. The thermally switched devices use single-mode strip waveguides with dimensions 0.26×0.6 μm2, operating at a wavelength of /spl lambda/=1.55 μm. Useful device characteristics include a low switching power, 50 mW, and a fast rise time of <3.5 μs. These results demonstrate the potential of this high-index-contrast materials system for the design of fast and low-power thermooptic switches and as an active element in photonic integrated circuits.

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Metadata

Authors
Espinola, R. L., Tsai, M. C., Yardley, J. T., & Osgood, R. M.
Venue
IEEE Photonics Technology Letters
Published
2003-10
Volume
15
Issue
10
Pages
1366-1368
ISSN
  • 1041-1135 (ISSN-L)
  • 1941-0174
OpenAlex
W2155066611
Cited by
269
References
0
FWCI
15.42
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Fast and low-power thermooptic switch on thin silicon-on-insulator. https://app.cochat.ai/papers/10.1109/lpt.2003.818246
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Espinola, R. L., Tsai, M. C., Yardley, J. T., & Osgood, R. M. (2003). Fast and low-power thermooptic switch on thin silicon-on-insulator. IEEE Photonics Technology Letters. https://doi.org/10.1109/lpt.2003.818246

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