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Triggering phenomena in avalanche diodes
Abstract
The operation of a small area p-n junction diode above the breakdown voltage is analyzed. A new formulation in terms of ionization probability is used to derive the rate of turn-on of current in such structures. Two differential equations are given which may be used to compute the probability that a carrier swept into or generated within the space-charge region triggers avalanche breakdown. For a 27-V n+-p diode biased 1 V above breakdown, this probability is close to 0.5 for an electron entering from the p side, or 0.1 for a hole entering from n side. Experimental measurements are in good agreement with the theoretical predictions.
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Citations
Cited by
Progress in Silicon Single-Photon Avalanche Diodes
Ghioni, M., Gulinatti, A., Rech, I., Zappa, F., & Cova, S. (2007) · IEEE Journal of Selected Topics in Quantum Electronics · doi:10.1109/jstqe.2007.902088 · Cited by 309
Noise-free high-efficiency photon-number-resolving detectors
Rosenberg, D., Lita, A., Miller, A., & Nam, S. (2005) · Physical Review A · doi:10.1103/physreva.71.061803 · Cited by 242
Metadata
- Authors
- Oldham, W. G., Samuelson, R. R., & Antognetti, P.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 1972-09
- Volume
- 19
- Issue
- 9
- Pages
- 1056-1060
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2135260691
- Cited by
- 236
- References
- 0
- FWCI
- 4.25
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Triggering phenomena in avalanche diodes. https://app.cochat.ai/papers/10.1109/t-ed.1972.17544
- The paper
- Oldham, W. G., Samuelson, R. R., & Antognetti, P. (1972). Triggering phenomena in avalanche diodes. IEEE Transactions on Electron Devices. https://doi.org/10.1109/t-ed.1972.17544
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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