The DOI matches its Crossref record; 26 of the 26 references it cites were found in a registry or an index.
Power Loss and Thermal Impedance Modeling of Multilevel Power Converter With Discontinuous Modulation
Abstract
The hard switching operation of the insulated gate bipolar transistor (IGBT)-based multilevel converters (MLCs) in the transformer less direct integration of renewable power plants produces a considerable amount of switching and conduction power loss. This eventually causes higher junction temperature and lower thermal stability. The symmetrically designed MLC using third harmonic sixty-degree bus-clamped pulse width modulation (BCPWM) technique demonstrates reduced switching losses and better harmonic spectra. However, the development of analytical power loss model is a complex and challenging issue due to the discontinuous switching mode of IGBTs for the BCPWM in MLC. In this regard, an analytical model for calculating the average and the rms currents for the hard switching operation of IGBTs and antiparallel diodes (APDs) with BCPWM is proposed. Furthermore, to calculate the device turn-on and turn-off losses, a discrete form of equation is presented to evaluate the transition times of switching more precisely. The numerical power loss values of IGBTs and APDs found from the derived analytical equations for MLC are compared with the simulation and experimental results. The numerical results agree well with the simulated and the experimental outcomes, which validate the proposed analytical loss model. Moreover, an advanced three dimensional thermal impedance model with chip-wise interdependent multilayer thermal coupling effect is also considered in this paper to realize the critical thermal loading condition of the switching devices.
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“In summary, a comprehensive thermalaware design strategy-combining PoF-based lifetime models, TSEP-based temperature estimation, thermal-path optimization, and integrated modeling-is essential for early detection of failure mechanisms and for ensuring the reliability of thermally sensitive WBG devices [79].”
From Thermal Management of Wide-Bandgap Power Semiconductors: Strategies and Challenges in SiC and GaN Power Devices (2025) · cites this paper as [79]
Citations
Cites
Recent Advances and Industrial Applications of Multilevel Converters
Kouro, S., Malinowski, M., Gopakumar, K., Pou, J., Franquelo, L. G., Wu, B., Rodríguez, J., Pérez, M. A., & Leon, J. I. (2010) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2010.2049719 · Cited by 3,947
Modulation, Losses, and Semiconductor Requirements of Modular Multilevel Converters
Rohner, S., Bernet, S., Hiller, M., & Sommer, R. (2009) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2009.2031187 · Cited by 934
Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems
Choi, U., Blaabjerg, F., & Lee, K. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2014.2373390 · Cited by 700
Islam, M. R., Guo, Y. G., & Zhu, J. G. (2013) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2290313 · Cited by 300
Self-citationBahman, A. S., Ma, K., & Blaabjerg, F. (2017) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2017.2694548 · Cited by 288
Hazra, S., De, A., Cheng, L., Palmour, J. W., Schupbach, M., Hull, B., Allen, S., & Bhattacharya, S. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2432012 · Cited by 270
Islam, M. R., Mahfuz-Ur-Rahman, A. M., Muttaqi, K. M., & Sutanto, D. (2018) · IEEE Transactions on Energy Conversion · doi:10.1109/tec.2018.2878885 · Cited by 178
Self-citationIslam, M. R., Mahfuz-Ur-Rahman, A. M., Islam, M. M., Guo, Y. G., & Zhu, J. G. (2017) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2017.2652402 · Cited by 148
Self-citationZhang, Y., Wang, H., Wang, Z., Yang, Y., & Blaabjerg, F. (2019) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2018.2823664 · Cited by 128
A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations
Wu, R. L., Wang, H., Pedersen, K. B., et al. (2016) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2016.2540614 · Cited by 125
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Research works printed but not linked: 1
- 2015, INFINEON Application Note AN 2011-05 Industrial IGBT Modules Explanation of Technical Information
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Han, G., Kim, J., Park, S., & Bae, W. (2025) · Electronics · doi:10.3390/electronics14214193 · Cited by 34
“…a comprehensive thermal-aware design strategy—combining PoF-based lifetime models, TSEP-based temperature estimation, thermal-path optimization, and integrated modeling—is essential for early detection of failure mechanisms and for ensuring the reliability of thermally sensitive WBG devices [79].”
Metadata
- Authors
- Islam, M. M., Rahman, M. A., & Islam, M. R.
- Affiliations
- Z. H. Sikder University of Science and Technology (BD)
- University of Wollongong (AU)
- Venue
- IEEE Transactions on Energy Conversion
- Published
- 2021-03
- Volume
- 36
- Issue
- 1
- Pages
- 36-47
- ISSN
- 0885-8969 (ISSN-L)
- 1558-0059
- OpenAlex
- W3035466448
- Cited by
- 16
- References
- 26
- Citations by year
- 2026: 1 · 2025: 2 · 2024: 3 · 2023: 6 · 2022: 3 · 2021: 1
- FWCI
- 0.86
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Energy Conversion (publishedVersion)
- Research Online (University of Wollongong) (submittedVersion)
- Figshare (submittedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Multilevel Inverters and Converters
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › HVDC Systems and Fault Protection
- Keywords
- multilevel converters, power loss modeling, thermal impedance, IGBT, hard switching, switching losses, conduction losses, anti-parallel diodes, RMS current, junction temperature, renewable energy integration, 3D thermal modeling
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