The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Epitaxial Graphene Transistors on SiC Substrates
Open accessAbstract
This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods. The graphene devices presented feature high-k dielectric, mobilities up to 5000 cm2/Vldr s, and Ion/Ioffratios of up to seven, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micrometer-scale devices have negligible band gaps and, therefore, large leakage currents.
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Citations
Cites
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Berger, C., Song, Z., Li, T., Li, X., Ogbazghi, A. Y., Feng, R., Dai, Z., Marchenkov, A. N., Conrad, E. H., First, P. N., et al. (2004) · The Journal of Physical Chemistry B · doi:10.1021/jp040650f · Cited by 3,548
Self-citation
Cited by
Carbide‐Derived Carbons – From Porous Networks to Nanotubes and Graphene
Presser, V., Heon, M., & Gogotsi, Y. (2011) · Advanced Functional Materials · doi:10.1002/adfm.201002094 · Cited by 678
Metadata
- Authors
- Kedzierski, J., Hsu, P.-L., Healey, P., Wyatt, P. W., Keast, C. L., Sprinkle, M., Berger, C., & de Heer, W. A.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2008-08
- Volume
- 55
- Issue
- 8
- Pages
- 2078-2085
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2056506682
- Cited by
- 428
- References
- 2
- FWCI
- 24.59
- Type
- journal article
- Language
- en
- Open access
- green
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- Kedzierski, J., Hsu, P.-L., Healey, P., Wyatt, P. W., Keast, C. L., Sprinkle, M., Berger, C., & de Heer, W. A. (2008). Epitaxial Graphene Transistors on SiC Substrates. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2008.926593
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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