The DOI matches its Crossref record; 9 of the 9 references it cites were found in a registry or an index.
A Versatile Memristor Model With Nonlinear Dopant Kinetics
Abstract
The need for reliable models that take into account the nonlinear kinetics of dopants is nowadays of paramount importance, particularly with the physical dimensions of electron devices shrinking to the deep nanoscale range and the development of emerging nanoionic systems such as the memristor. In this paper, we present a novel nonlinear dopant drift model that resolves the boundary issues existing in previously reported models that can be easily adjusted to match the dynamics of distinct memristive elements. With the aid of this model, we examine switching mechanisms, current-voltage characteristics, and the collective ion transport in two terminal memristive devices, providing new insights on memristive behavior.
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Citations
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268 · cited 6×
“Memristance was initially postulated [8] as the functional”
BackgroundInfluentialRedox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174 · cited 2×
“resembles the behavior of chemical synapses [13], [14].”
BackgroundMemristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Memristive devices and systems
Chua, L. O., & Kang, S. M. (1976) · Proceedings of the IEEE · doi:10.1109/proc.1976.10092 · Cited by 2,604 · cited 6×
“2158004 Chua [8] and later on by Chua and Kang [9].”
BackgroundInfluential‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929
How We Found The Missing Memristor
Williams, R. (2008) · IEEE Spectrum · doi:10.1109/mspec.2008.4687366 · Cited by 697 · cited 1×
“until 2008 when a team from HP Laboratories successfully correlated the characteristics of nanoscale switches in crossbar architectures [6], [7] with the theory originally presented by”
BackgroundSwitching phenomena in titanium oxide thin films
Argall, F. (1968) · Solid-State Electronics · doi:10.1016/0038-1101(68)90092-0 · Cited by 308
Cited by
Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies
Kvatinsky, S., Satat, G., Wald, N., Friedman, E. G., Kolodny, A., & Weiser, U. C. (2014) · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · doi:10.1109/tvlsi.2013.2282132 · Cited by 677
Understanding memristive switching via in situ characterization and device modeling
Sun, W., Gao, B., Chi, M., Xia, Q., Yang, J. J., Qian, H., & Wu, H. (2019) · Nature Communications · doi:10.1038/s41467-019-11411-6 · Cited by 482
Logic Design Within Memristive Memories Using Memristor-Aided loGIC (MAGIC)
Talati, N., Gupta, S., Mane, P., & Kvatinsky, S. (2016) · IEEE Transactions on Nanotechnology · doi:10.1109/tnano.2016.2570248 · Cited by 339
Neuromemristive Circuits for Edge Computing: A Review
Krestinskaya, O., James, A. P., & Chua, L. O. (2020) · IEEE Transactions on Neural Networks and Learning Systems · doi:10.1109/tnnls.2019.2899262 · Cited by 319
Aguirre, F. L., Pazos, S. M., Palumbo, F., Sune, J., & Miranda, E. (2020) · IEEE Access · doi:10.1109/access.2020.3035638 · Cited by 36
Metadata
- Authors
- Prodromakis, T., Peh, B. P., Papavassiliou, C., & Toumazou, C.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2011-09
- Volume
- 58
- Issue
- 9
- Pages
- 3099-3105
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W2110697514
- Cited by
- 453
- References
- 9
- FWCI
- 16.71
- Type
- journal article
- Language
- en
- Open access
- closed
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- Prodromakis, T., Peh, B. P., Papavassiliou, C., & Toumazou, C. (2011). A Versatile Memristor Model With Nonlinear Dopant Kinetics. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2011.2158004
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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