The DOI matches its Crossref record; 5 of the 5 references it cites were found in a registry or an index.
A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations
Abstract
A physics-based compact model of metal-oxide-based resistive-switching random access memory (RRAM) cell under dc and ac operation modes is presented. In this model, the conductive filament evolution corresponding to the resistive switching process is modeled by considering the transport behaviors of oxygen vacancies and oxygen ions together with the temperature effect. Both the metallic-like and electron hopping conduction transports are considered to model the conduction of RRAM. The model can reproduce both the typical I-V characteristics of RRAM in high-/low-resistance state (LRS) and the nonlinear characteristics in LRS. Moreover, to accurately model ac operation mode, the effects of parasitic capacitance and resistance are included in our model. The developed compact model is verified and calibrated by measured data in different HfOx-based RRAM devices under dc and ac operation modes. The excellent agreement between the model predictions and experimental results shows a promising prospect of the future implementation of this compact model in large-scale circuit simulation to optimize the design of RRAM.
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Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Lee, M.-J., Lee, C. B., Lee, D., Lee, S. R., Chang, M., Hur, J. H., Kim, Y.-B., Kim, C.-J., Seo, D. H., Seo, S., et al. (2011) · Nature Materials · doi:10.1038/nmat3070 · Cited by 2,228
Guan, X., Yu, S., & Wong, H.-S. P. (2012) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2012.2184545 · Cited by 355 · cited 3×
“The generation probability (Pg) of Vo under electric field during dt is governed by the following equation [12]:”
BackgroundYu, S., Gao, B., Fang, Z., Yu, H., Kang, J., & Wong, H.-S. P. (2012) · 2012 International Electron Devices Meeting · doi:10.1109/iedm.2012.6479018 · Cited by 213
Self-citationDevice and SPICE modeling of RRAM devices
Sheridan, P., Kim, K.-H., Gaba, S., Chang, T., Chen, L., & Lu, W. (2011) · Nanoscale · doi:10.1039/c1nr10557d · Cited by 98
Cited by
Understanding memristive switching via in situ characterization and device modeling
Sun, W., Gao, B., Chi, M., Xia, Q., Yang, J. J., Qian, H., & Wu, H. (2019) · Nature Communications · doi:10.1038/s41467-019-11411-6 · Cited by 482
Self-citationThe fabrication and MOSFET-only circuit implementation of semiconductor memristor
Babacan, Y., Yesil, A., & Gul, F. (2018) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2018.2808530 · Cited by 98
A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems
Liao, Y., Gao, B., Xu, F., Yao, P., Chen, J., Zhang, W., Tang, J., Wu, H., & Qian, H. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2975314 · Cited by 53
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Metadata
- Authors
- Huang, P., Liu, X. Y., Chen, B., Li, H. T., Wang, Y. J., Deng, Y. X., Wei, K. L., Zeng, L., Gao, B., Du, G., Zhang, X., & Kang, J. F.
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2013-12
- Volume
- 60
- Issue
- 12
- Pages
- 4090-4097
- ISSN
- 0018-9383 (ISSN-L)
- 1557-9646
- OpenAlex
- W1979260777
- Cited by
- 206
- References
- 5
- FWCI
- 8.99
- Type
- journal article
- Language
- en
- Open access
- closed
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- Huang, P., Liu, X. Y., Chen, B., Li, H. T., Wang, Y. J., Deng, Y. X., Wei, K. L., Zeng, L., Gao, B., Du, G., Zhang, X., & Kang, J. F. (2013). A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations. IEEE Transactions on Electron Devices. https://doi.org/10.1109/ted.2013.2287755
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