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Parasitic Oscillation Analysis of Trench IGBT During Short-Circuit Type II Using TCAD-Based Signal Flow Graph Model
Abstract
The oscillation phenomenon of trench-type insulated gate bipolar transistors during short-circuit (SC) type II was investigated experimentally and theoretically. The gate resistance required to suppress oscillations decreased with an increasing collector voltage. The oscillation conditions were calculated from the signal flow graph model using the${S}$-parameter based on a technology computer-aided design simulation. The calculation results reproduced the locus of the collector voltage dependence of the experimentally measured gate resistance. The oscillation mechanism was investigated using the device simulation. The response of carrier density modulation at the base-drift layer boundary was found to transmit to the collector side through the electron–hole plasma region during the oscillation, indicating that the transfer characteristics of the carrier density modulation in the drift region at the specific collector voltage influence the collector voltage dependence of the SC oscillation. The influence of circuit parameters on the oscillation was also investigated. An increase in the emitter inductance suppressed the oscillations, whereas an increase in gate inductance increases oscillations.
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In the citing paper
“If emitter inductance is zero, the critical gate resistance required increases with the increase in gate inductance.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [54]
In the citing paper
“The circuit stability depends on the emitter inductance, and a small emitter inductance destabilizes the circuit, considering that an increase in emitter inductance is preferable to an increase in collector inductance, which can minimize the possibility of oscillation; gate inductance should be as small as possible to minimize the oscillation [54].”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [54]
In the citing paper
“Furthermore, if gate inductance is constant, critical gate resistance decreases as emitter inductance increases.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [54]
In the citing paper
“The circuit stability depends on the emitter inductance, and a small emitter inductance destabilizes the circuit, considering that an increase in emitter inductance is preferable to an increase in collector inductance, which can minimize the possibility of oscillation; gate inductance should be as small as possible to minimize the oscillation [54].”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [54]
In the citing paper
“Therefore, the design criteria in [54] would be significant, as the emitter inductance, gate inductance, collector inductance, and gate resistance are the crucial parameters for current imbalance, as well as system oscillation.”
From Paralleling of IGBT Power Semiconductor Devices and Reliability Issues (2023) · cites this paper as [54]
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Research works printed but not linked: 17
- Reigosa, Evidence of gate voltage oscillations during short circuit of commercial 1.7 kV / 1 kA IGBT power modules, 1
- 10.1149/08007.0089ecst · DOI
- Lutz, Short circuit III in high power IGBTs, 1
- 10.1109/IPEMC.2016.7512839 · DOI
- 10.1109/TPEL.2017.2783044 · DOI
- 10.1109/ISPSD.2018.8393614 · DOI
- 10.1109/ISPSD.2012.6229053 · DOI
- 10.1109/TPEL.2017.2789240 · DOI
- 10.1016/j.microrel.2013.07.128 · DOI
- 10.1016/j.sse.2020.107884 · DOI
- Kono, A Study of a parasitic oscillation of trench IGBT in short-circuit mode based on signal flow graph model, 487
- 10.1109/ISPSD.2000.856842 · DOI
- 10.1109/ISPSD.2003.1225252 · DOI
- 10.1109/TPEL.2016.2619620 · DOI
- 2009, IGW08T120 Datasheet Rev.2.6
- 2016, Sentaurus Device User Guide
- 10.1109/TED.2018.2796314 · DOI
Cited by
Paralleling of IGBT Power Semiconductor Devices and Reliability Issues
Tripathi, R. N., & Omura, I. (2023) · Electronics · doi:10.3390/electronics12183826 · Cited by 14
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Metadata
- Authors
- Kono, H., & Omura, I.
- Affiliations
- Kyushu Institute of Technology, Kitakyushu, Japan
- ORCID
- Kono, Hiroshi
- Venue
- IEEE Transactions on Electron Devices
- Published
- 2022-10
- Volume
- 69
- Issue
- 10
- Pages
- 5705-5712
- ISSN
- 0018-9383
- 1557-9646
- Cited by
- 2
- References
- 0
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