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Cited by 65

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Dynamic Characterization of Parallel-Connected High-Power IGBT Modules

Chen, Nan, Chimento, Filippo, Nawaz, Muhammad, Wang, Liwei·2015·IEEE Transactions on Industry Applications
DOI 10.1109/tia.2014.2330075
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Abstract

In high-power converter design, insulated gate bipolar transistor (IGBT) modules are often operated in parallel to reach high output currents. Evaluating the electrical and thermal behavior of the parallel IGBTs is crucial for the design and reliable operation of converter systems. This paper investigates the static and dynamic characterization of parallel IGBTs and the influence of the electrical parameters on the IGBT behavior. Si-based IGBT power modules with voltage rating of 4.5 kV and current rating of 1 kA are used for the experimental evaluation of module parallel connections. Parallel-connected modules have been driven by several commercial IGBT gate units at various dc-link voltages and current levels and with different temperatures. The tested IGBT gate units show good current sharing performance between the two parallel modules. Other important influencing factors such as busbar design layout, stray inductance variation, and gate driving are also investigated for parallel connections of IGBT modules. Finally, the switching energy of the parallel modules is extracted for IGBTs and diodes under different conditions.

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Research works printed but not linked: 19

  1. 10.1109/ISIE.2007.4374722 · DOI
  2. 10.1109/28.382122 · DOI
  3. 10.1109/16.725257 · DOI
  4. belverde, 0, Improvement of the parallel behaviour of IGBT connections by gate control circuit, Conf Rec EPE, 1
  5. 10.1109/IECON.2002.1187568 · DOI
  6. 0, 5SNA 1000G450300 HiPak Single IGBT
  7. alvarez, 0, Characterization of a new press pack $\hbox{SPT}+\hbox{IGBT}$ for medium voltage converters, Proc IEEE ECCE, 3954
  8. eicher, 0, 4.5 kV press pack IGBT designed for ruggedness and reliability, Conf Rec 39th IEEE IAS Annu Meeting, 3, 1534
  9. chimento, 0, Super-junction MOSFET and SiC diode considerations for optimizing efficiency in boost PFC applications, Proc 32nd IEEE IECON, 2067
  10. 10.1109/TPEL.2011.2171723 · DOI
  11. 10.1109/IAS.1995.530410 · DOI
  12. rahimo, 0, 2.5 kV–6.5 kV industry standard IGBT modules setting a new benchmark in SOA capability, Proc 25th Int PCIM Conf, 314
  13. rahimo, 0, A study of switching-self-clamping-mode “SSCM” as an over-voltage protection feature in high voltage IGBTs, Proc IEEE ISPSD, 67
  14. 10.1109/ISPSD.2006.1666060 · DOI
  15. 10.1109/TIA.2012.2191171 · DOI
  16. kopta, 0, A 6.5 kV IGBT module with very high safe operating area, Conf Rec IEEE IAS Annu Meeting, 794
  17. baliga, 1987, Modern Power Devices
  18. mohan, 1995, Power Electronics Converters Applications Design
  19. schlapbach, 0, Dynamic paralleling problems in IGBT module construction and application, Proc 6th Int CIPS, 1

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Metadata

Authors
Chen, N., Chimento, F., Nawaz, M., & Wang, L.
Venue
IEEE Transactions on Industry Applications
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published
2015-01
Volume
51
Issue
1
Pages
539-546
ISSN
  • 0093-9994
  • 1939-9367
DOI
10.1109/tia.2014.2330075
Cited by
65
References
0
Licence
ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html (vor)

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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.

Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.