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SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

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Biela, Juergen, Schweizer, Mario, Waffler, Stefan, Kolar, Johann W.·2011·IEEE Transactions on Industrial Electronics

Abstract

Switching devices based on wide bandgap materials such as silicon carbide (SiC) offer a significant performance improvement on the switch level (specific on resistance, etc.) compared with Si devices. Well-known examples are SiC diodes employed, for example, in inverter drives with high switching frequencies. In this paper, the impact on the system-level performance, i.e., efficiency, power density, etc., of industrial inverter drives and of dc-dc converter resulting from the new SiC devices is evaluated based on analytical optimization procedures and prototype systems. There, normally on JFETs by SiCED and normally off JFETs by SemiSouth are considered.

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Metadata

Authors
Biela, J., Schweizer, M., Waffler, S., & Kolar, J. W.
Venue
IEEE Transactions on Industrial Electronics
Published
2011-07
Volume
58
Issue
7
Pages
2872-2882
ISSN
  • 0278-0046 (ISSN-L)
  • 1557-9948
OpenAlex
W2171886847
Cited by
892
References
0
FWCI
18.19
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors. https://app.cochat.ai/papers/10.1109/tie.2010.2072896
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Biela, J., Schweizer, M., Waffler, S., & Kolar, J. W. (2011). SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors. IEEE Transactions on Industrial Electronics. https://doi.org/10.1109/tie.2010.2072896

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