The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Comparative Analysis on Conducted CM EMI Emission of Motor Drives: WBG Versus Si Devices
Abstract
Silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron mobility transistors are perceived as future replacements for Si IGBTs and MOSFETs in medium- and low-voltage drives due to their low conduction and switching losses. However, it is widely believed that the already significant conducted common-mode (CM) electromagnetic interference (EMI) emission of motor drives will be further exacerbated by the high-speed switching operation of these new devices. Hence, this paper investigates and quantifies the increase in the conducted CM EMI emission of a pulse width modulation inverter-based motor drive when SiC and GaN devices are adopted. Through an analytical approach, the results reveal that the influence of dv/dt on the conducted CM emission is generally limited. On the other hand, the influence of switching frequency is more significant. Lab tests are also conducted to verify the analysis.
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Citations
Cites
A Survey of Wide Bandgap Power Semiconductor Devices
Millán, J., Godignon, P., Perpiñà, X., Pérez-Tomás, A., & Rebollo, J. (2014) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2013.2268900 · Cited by 2,685 · cited 1×
“W IDE bandgap (WBG) semiconductor-based switching devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron mobility transistor (HEMTs), have proven to be superior to the state-of-the-art Si technology in terms of low-loss and high-temperature performance [1]–[5].”
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Cited by
Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges
Morya, A. K., Gardner, M. C., Anvari, B., Liu, L., Yepes, A. G., Doval-Gandoy, J., & Toliyat, H. A. (2019) · IEEE Transactions on Transportation Electrification · doi:10.1109/tte.2019.2892807 · Cited by 444
A Review of High-Speed GaN Power Modules: State of the Art, Challenges, and Solutions
Emon, A. I., Mustafeez-ul-Hassan, Mirza, A. B., Kaplun, J., Vala, S. S., & Luo, F. (2023) · IEEE Journal of Emerging and Selected Topics in Power Electronics · doi:10.1109/jestpe.2022.3232265 · Cited by 151
Adoption of wide bandgap technology in hybrid/electric vehicles-opportunities and challenges
Han, D., Li, S., Lee, W., & Sarlioglu, B. (2017) · 2017 IEEE Transportation Electrification Conference and Expo (ITEC) · doi:10.1109/itec.2017.7993332 · Cited by 34
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Metadata
- Authors
- Han, D., Li, S., Wu, Y., Choi, W., & Sarlioglu, B.
- Venue
- IEEE Transactions on Industrial Electronics
- Published
- 2017-10
- Volume
- 64
- Issue
- 10
- Pages
- 8353-8363
- ISSN
- 0278-0046 (ISSN-L)
- 1557-9948
- OpenAlex
- W2596529426
- Cited by
- 297
- References
- 1
- FWCI
- 12.42
- Type
- journal article
- Language
- en
- Open access
- closed
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- Han, D., Li, S., Wu, Y., Choi, W., & Sarlioglu, B. (2017). Comparative Analysis on Conducted CM EMI Emission of Motor Drives: WBG Versus Si Devices. IEEE Transactions on Industrial Electronics. https://doi.org/10.1109/tie.2017.2681968
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