Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point of Load Converter
Abstract
The introduction of enhancement-mode gallium-nitride-based power devices such as the eGaN FET offers the potential to achieve higher efficiencies and higher switching frequencies than possible with silicon MOSFETs. With the improvements in switching performance and low parasitic packaging provided by eGaN FETs, the printed circuit board (PCB) layout becomes critical to converter performance. This paper will study the effect of PCB layout parasitic inductance on efficiency and peak device voltage stress for an eGaN FET-based point of load (POL) converter operating at a switching frequency of 1 MHz, an input voltage range of 12-28 V, an output voltage of 1.2 V, and an output current up to 20 A. This paper will also compare the parasitic inductances of conventional PCB layouts and propose an improved PCB design, providing a 40% decrease in parasitic inductance over the best conventional PCB design.
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Space-capable and reliable systems require greater resources of power, volume, and mass.
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References 12 · Cited by 410
Research works printed but not linked: 14
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- Authors
- Reusch, D., & Strydom, J.
- Affiliations
- Efficient Power Conversion Corporation, El Segundo, CA, USA
- ORCID
- Reusch, David
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2014-04
- Volume
- 29
- Issue
- 4
- Pages
- 2008-2015
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W1978100114
- Cited by
- 410
- References
- 12
- Citations by year
- 2026: 24 · 2025: 40 · 2024: 37 · 2023: 29 · 2022: 29 · 2021: 31 · 2020: 47 · 2019: 39 · 2018: 31 · 2017: 30 · 2016: 28 · 2015: 21 · 2014: 21 · 2013: 3
- FWCI
- 14.57
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Electromagnetic Compatibility and Noise Suppression
- Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
- Keywords
- printed circuit board design, parasitic inductance, point-of-load converters, gallium nitride power devices, high switching frequency, converter efficiency, device voltage stress
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