Cited by 148Advanced DC-DC ConvertersGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor Technologies

Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC–DC Converters

Reusch, David, Strydom, Johan·2015·IEEE Transactions on Power Electronics

Abstract

The emergence of gallium nitride (GaN)-based power devices offers the potential to achieve higher efficiencies and higher switching frequencies than possible with mature silicon (Si) power MOSFETs. In this paper, we will evaluate the ability of gallium nitride transistors to improve efficiency and output power density in high frequency resonant and soft-switching applications. To experimentally verify the benefits of replacing Si MOSFETs with enhancement mode GaN transistors (eGaNFETs) in a high frequency resonant converter, 48-12 V unregulated isolated bus converter prototypes operating at a switching frequency of 1.2 MHz and an output power of up to 400 W are compared using Si and GaN power devices.

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Crossref · 10.1109/tpel.2014.2364799

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  • An integrated array controller battery charger is proposed for SmallSat in [140].

    “An integrated array controller battery charger is proposed for SmallSat in [140], which can be seen in Fig. 27.”

    From A Comprehensive Review on Small Satellite Microgrids (2022) · cites this paper as [140]

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References 35 · Cited by 148

Authors
Reusch, D., & Strydom, J.
Venue
IEEE Transactions on Power Electronics
Published
2015-09
Volume
30
Issue
9
Pages
5151-5158
ISSN
  • 0885-8993 (ISSN-L)
  • 1941-0107
OpenAlex
W2030889140
Cited by
148
References
35
Citations by year
2026: 3 · 2025: 7 · 2024: 12 · 2023: 13 · 2022: 7 · 2021: 7 · 2020: 14 · 2019: 19 · 2018: 15 · 2017: 22 · 2016: 21 · 2015: 8
FWCI
9.02
Type
journal article
Language
en
Open access
closed
Locations
IEEE Transactions on Power Electronics (publishedVersion)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
  • Physical Sciences › Physics and Astronomy › Condensed Matter Physics › GaN-based semiconductor devices and materials
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
Keywords
gallium nitride transistors, resonant DC-DC converter, soft switching, power conversion efficiency, output power density, high switching frequency

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