The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
A Digital Signal Processing Based Detection Circuit for Short-Circuit Protection of SiC MOSFET
Abstract
A short-circuit detection (SCD) circuit is proposed for power electronics systems that use silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed SCD circuit incorporates a digital circuit for processing the voltage induced at the parasitic inductance of the source of SiC MOSFET to obtain an improved stable turn-off operation of the SiC MOSFET under SC condition. Compared with that of the conventional analog signal processing based SCD circuits, the proposed circuit has the advantages of having a turn-off operation which is robust to process, voltage, and temperature variations, being fully integrated without the use of external components and ease of design. The proposed circuit was implemented in a 350-nm Bipolar-CMOS-DMOS process. For functional verification, an SC test board integrating the proposed SCD circuit was developed. Experimental result validates that the proposed SCD circuit effectively functions under SC condition.
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“The shorted switch faults occur rapidly and has to be detected immediately, so in many modern PMSM drives hardware protection circuits are typically utilized [245].”
From Fault Diagnosis and Fault-Tolerant Control of PMSM Drives–State of the Art and Future Challenges (2022) · cites this paper as [245]
Citations
Cites
Hazra, S., De, A., Cheng, L., Palmour, J. W., Schupbach, M., Hull, B., Allen, S., & Bhattacharya, S. (2015) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2015.2432012 · Cited by 270
Wang, Z., Shi, X., Xue, Y., Tolbert, L. M., Wang, F. “., & Blalock, B. J. (2014) · IEEE Transactions on Industrial Electronics · doi:10.1109/tie.2013.2297304 · Cited by 269
Short-circuit evaluation and overcurrent protection for SiC power MOSFETs
Awwad, A. E., & Dieckerhoff, S. (2015) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2015.7311701 · Cited by 86
Current measurement and short-circuit protection of an IGBT based on module parasitics
Oinonen, M., Laitinen, M., & Kyyrä, J. (2014) · European Conference on Power Electronics and Applications · doi:10.1109/epe.2014.6910824 · Cited by 45
A Smart IGBT Gate Driver IC With Temperature Compensated Collector Current Sensing
Chen, J., Zhang, W. J., Shorten, A., Yu, J., Sasaki, M., Kawashima, T., Nishio, H., & Ng, W. T. (2018) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2018.2865788 · Cited by 37
Hofstetter, P., & Bakran, M. (2019) · IEEE Transactions on Power Electronics · doi:10.1109/tpel.2019.2950966 · Cited by 22
A High-Speed Protection Circuit for IGBTs Subjected to Hard-Switching Faults
Horiguchi, T., Kinouchi, S.-I., Nakayama, Y., et al. (2014) · IEEE Transactions on Industry Applications · doi:10.1109/tia.2014.2354402 · Cited by 20
Switching losses analysis in sic power mosfet
Lirio, L. E. A., Bellar, M. D., Neto, J. A. M., et al. (2015) · doi:10.1109/cobep.2015.7420269 · Cited by 15
Research works printed but not linked: 1
- 10.1109/TIE.2013.2297304 · DOI
Cited by
Sorted by citations
Fault Diagnosis and Fault-Tolerant Control of PMSM Drives–State of the Art and Future Challenges
Orlowska-Kowalska, T., Wolkiewicz, M., Pietrzak, P., Skowron, M., Ewert, P., Tarchala, G., Krzysztofiak, M., & Kowalski, C. T. (2022) · IEEE Access · doi:10.1109/access.2022.3180153 · Cited by 328
Metadata
- Authors
- Lee, S., Kim, K., Shim, M., & Nam, I.
- Affiliations
- Korea Electrotechnology Research Institute (KR)
- Pusan National University (KR)
- Venue
- IEEE Transactions on Power Electronics
- Published
- 2021-12
- Volume
- 36
- Issue
- 12
- Pages
- 13379-13382
- ISSN
- 0885-8993 (ISSN-L)
- 1941-0107
- OpenAlex
- W3173644065
- Cited by
- 24
- References
- 8
- Citations by year
- 2026: 1 · 2025: 7 · 2024: 3 · 2023: 7 · 2022: 6
- FWCI
- 1.18
- Type
- journal article
- Language
- en
- Open access
- closed
- Licence
- Locations
- IEEE Transactions on Power Electronics (publishedVersion)
- Funders
- Korea Electrotechnology Research Institute
- National Research Council of Science and Technology
- Ministry of Science and ICT, South Korea (21A01060)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Silicon Carbide Semiconductor Technologies
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Analog and Mixed-Signal Circuit Design
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced DC-DC Converters
- Keywords
- short-circuit protection, SiC MOSFET, digital signal processing, parasitic inductance, source voltage, power semiconductor devices, BCD process, integrated circuit design
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