Effects of Thermal Annealing on the Structure of Ferroelectric Thin Films
Open accessAbstract
The effects of thermal annealing on the structure of polycrystalline Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) ferroelectric thin films prepared by chemical solution deposition on Pt/TiO x electrode stacks were studied using scanning electron microscopy, transmission electron microscopy (TEM), and grazing incidence X‐ray specular and diffuse reflectivity of synchrotron radiation. The stratified multilayered structure and element diffusions in the sample were characterized by TEM. Global statistical structural parameters including the density, surface or interface roughness and thickness of each layer in the samples were obtained from fitting the X‐ray specular reflectivity using a homogeneous stratified multilayer model of PZT/Pt/TiO x /SiO 2 . The results showed that the PZT surface and PZT/Pt interface roughness changed slightly during thermal annealing in oxygen at 700°C. By contrast, the density increase of the PZT ceramic and density decrease of the Pt‐bottom electrode during annealing were observed. A high density value of the PZT ceramic film after the annealing was found, up to 99.8% of the theoretical value of the corresponding bulk ceramics. The density changes of the PZT and Pt layers were further confirmed by X‐ray diffuse reflectivity. The influences of the annealing treatment on the density changes of the PZT and Pt layers were attributed to the further densification of the PZT ceramic and incorporation of light elements such as Zr, Ti and O from the neighboring layers into the Pt layer, respectively, as discussed in correlation with the TEM analyses.
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The XRD study suggests there are no large residual stress differences among the film thicknesses, but thermal stress due to thermal expansion mismatch between film and substrate is thickness-dependent.
“The XRD study in Figs.1(a) and 1(b) suggests that there are no large residual stress differences among the thicknesses but thermal stress due to the thermal expansion mismatch between the film and substrate are thickness-dependent.24”
From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [24]
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The other model antiferroelectric: PbHfO3 thin films from ALD precursors
Hanrahan, B., Milesi-Brault, C., Leff, A., Payne, A., Liu, S., Guennou, M., & Strnad, N. (2021) · APL Materials · doi:10.1063/5.0035730 · Cited by 19 · see citing works
- Authors
- Cao, J., Solbach, A., Klemradt, U., Weirich, T., Mayer, J., Böttger, U., Ellerkmann, U., Schorn, P. J., Gerber, P., & Waser, R.
- Affiliations
- RWTH Aachen University (DE)
- Venue
- Journal of the American Ceramic Society
- Publisher
- Wiley
- Published
- 2006-02-13
- Volume
- 89
- Issue
- 4
- Pages
- 1321-1325
- ISSN
- 0002-7820 (ISSN-L)
- 1551-2916
- OpenAlex
- W2062076287
- Cited by
- 13
- References
- 0
- Citations by year
- 2021: 1 · 2016: 1 · 2015: 2 · 2014: 1 · 2013: 1
- FWCI
- 0.87
- Type
- journal article
- Language
- en
- Open access
- green
- bib-pubdb1.desy.de
- Licence
- Locations
- Journal of the American Ceramic Society (publishedVersion)
- Desy publication database (The Deutsches Elektronen-Synchrotron) (submittedVersion, other-oa)
- RWTH Publications (RWTH Aachen) (submittedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Materials Science › Electronic, Optical and Magnetic Materials › Multiferroics and related materials
- Keywords
- annealing, ferroelectric thin films, lead zirconate titanate, polycrystalline ceramics, chemical solution deposition, surface roughness, interface roughness, film density, densification, element diffusion, thin film structure
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