Growth of thin film ferroelectric PZT, PHT, and antiferroelectric PHO from atomic layer deposition precursors
Abstract
We present a conformal method of growing ferroelectric lead hafnate‐titanate (PbHf x Ti 1− x O 3 , PHT) and lead zirconate‐titanate (PbZr x Ti 1− x O 3 , PZT) using atomic layer deposition (ALD) precursors. The 4+ cation precursors consist of tetrakis dimethylamino titanium (TDMAT), tetrakis dimethylamino zirconium (TDMAZ) and tetrakis dimethyl amino hafnium (TDMAH) for Ti, Zr, and Hf, respectively. The Pb (2+) precursor was Lead bis(3‐N,N‐dimethyl‐2‐methyl‐2‐propanoxide) [Pb(DMAMP) 2 ]. PZT was limited to lead titanate (PTO)‐rich compositions, where x <0.25 for PbZr x Ti 1− x O 3 , and exhibited a remnant polarization of 26‐27 µC/cm 2 with a coercive field between 150 and 170 kV/cm. The 3D‐structure coating capability of PZT was demonstrated by deposition on micromachined trench sidewalls 45 µm deep. We fabricated Microelectromechanical systems (MEMS) cantilever arrays with PZT thin films grown using the present method and demonstrated piezoelectric actuation. Alternatively, PHT was deposited with Ti and Hf compositions within ±1 at.% of the morphotropic phase boundary (MPB). The PHT exhibited a remanent polarization of 7.0‐8.7 µC/cm 2 with a coercive field between 84‐100 kV/cm. We applied the same Pb and Hf precursors from the PHT process to grow antiferroelectric lead‐hafnate (PHO), which showed the characteristic electric field‐induced ferroelectric phase transition at approximately ±280 kV/cm and a maximum polarization of approximately ±32.8 µC/cm 2 .
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No electrical characterization on thin film PHO has been reported aside from the hysteresis loop in our recent work on PHO film growth.
“In particular, to the best of our knowledge, there is no reported electrical characterization on thin film PHO aside from the hysteresis loop in our recent work on PHO film growth.8”
From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [8]
The structural and electrical analysis reveals both similarities and differences to isomorphic PZO with an added benefit of more reliable ternary ALD growth from hafnia precursors vs zirconia.
“The structural and electrical analysis reveals both similarities and differences to the isomorphic PZO with an added benefit of more reliable ternary ALD growth from hafnia precursors vs zirconia.8”
From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [8]
PHO from ALD precursors crystallizes by interdiffusion of an amorphous HfO2 matrix with isolated crystalline PbO regions.
“These results support earlier observations 8 and suggest that PHO from ALD precursors crystalizes by interdiffusion of an amorphous HfO 2 matrix with isolated crystalline PbO regions.”
From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [8]
The Pb precursor does not wet the surface but forms a segregated, crystalline phase.
“This supports the observations from Strnad et al. that the Pb precursor does not wet the surface but instead forms a segregated, crystalline phase.8”
From The other model antiferroelectric: PbHfO3 thin films from ALD precursors (2021) · cites this paper as [8]
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The other model antiferroelectric: PbHfO3 thin films from ALD precursors
Hanrahan, B., Milesi-Brault, C., Leff, A., Payne, A., Liu, S., Guennou, M., & Strnad, N. (2021) · APL Materials · doi:10.1063/5.0035730 · Cited by 19 · see citing works
Self-citation
- Authors
- Strnad, N. A., Hanrahan, B. M., Potrepka, D. M., Pulskamp, J. S., Phaneuf, R. J., & Polcawich, R. G.
- Affiliations
- DEVCOM Army Research Laboratory (US)
- University of Maryland, College Park (US)
- Corresponding author
- Strnad, Nicholas A.
- ORCID
- Venue
- Journal of the American Ceramic Society
- Publisher
- Wiley
- Published
- 2020-11-05
- Volume
- 104
- Issue
- 3
- Pages
- 1216-1228
- ISSN
- 0002-7820 (ISSN-L)
- 1551-2916
- OpenAlex
- W3093054635
- Cited by
- 22
- References
- 0
- Citations by year
- 2026: 1 · 2025: 4 · 2024: 3 · 2023: 6 · 2022: 5 · 2021: 3
- FWCI
- 1.36
- Type
- journal article
- Language
- en
- Open access
- closed
- Locations
- Journal of the American Ceramic Society (publishedVersion)
- Topics
- Physical Sciences › Materials Science › Materials Chemistry › Ferroelectric and Piezoelectric Materials
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- lead zirconate titanate, ferroelectric thin films, antiferroelectric thin films, atomic layer deposition precursors, tetrakis(dimethylamino)titanium, morphotropic phase boundary, piezoelectric actuation, electric field-induced phase transition, conformal coating, trench sidewalls, remanent polarization
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