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Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography
Open accessAbstract
The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than developer contrast. Finally, they showed that with a high-development-rate process, a short duration development of 15s was sufficient to resolve high-resolution structures in 15-nm-thick resist, while a longer development degraded the quality of the structures with no improvement in the resolution.
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Cited by
Resolution Limits of Electron-Beam Lithography toward the Atomic Scale
Manfrinato, V. R., Zhang, L., Su, D., Duan, H., Hobbs, R. G., Stach, E. A., & Berggren, K. K. (2013) · Nano Letters · doi:10.1021/nl304715p · Cited by 451
Self-citationLim, G., Lee, K., Choi, S., & Yoon, H. J. (2023) · Coordination Chemistry Reviews · doi:10.1016/j.ccr.2023.215307 · Cited by 106
Advanced lithography materials: From fundamentals to applications
Zhang, Y., Yu, H., Wang, L., Wu, X., He, J., Huang, W., Ouyang, C., Chen, D., & Keshta, B. E. (2024) · Advances in Colloid and Interface Science · doi:10.1016/j.cis.2024.103197 · Cited by 72
Metadata
- Authors
- Yang, J. K. W., Cord, B., Duan, H., Berggren, K. K., Klingfus, J., Nam, S.-W., Kim, K.-B., & Rooks, M. J.
- Venue
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Publisher
- American Vacuum Society
- Published
- 2009-11-01
- Volume
- 27
- Issue
- 6
- Pages
- 2622-2627
- ISSN
- 1071-1023 (ISSN-L)
- 1520-8567
- OpenAlex
- W2161646562
- Cited by
- 185
- References
- 0
- FWCI
- 9.77
- Type
- journal article
- Language
- en
- Open access
- bronze
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- CoChat. (2026). Citation check: Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography. https://app.cochat.ai/papers/10.1116/1.3253652
- The paper
- Yang, J. K. W., Cord, B., Duan, H., Berggren, K. K., Klingfus, J., Nam, S.-W., Kim, K.-B., & Rooks, M. J. (2009). Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. https://doi.org/10.1116/1.3253652
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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