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Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction
Abstract
Silicon nanowires (whiskers) have been grown on Si(111) via the vapor–liquid–solid (VLS) reaction using silane as the Si source gas and Au as the mediating solvent. The silane partial pressure and temperature ranges were 0.01–1 Torr and 320–600 °C, respectively. Growth at high partial pressure and low temperature leads to the growth of Si nanowires as thin as 10 nm. These wires are single crystals but exhibit growth defects such as bending and kinking. Lowering the silane partial pressure leads to an increase in the wire width and a reduction in the tendency to form growth defects. At low pressure, 40–100 nm wide well-formed wires have been grown at 520 °C. The VLS reaction using silane allows the growth of Si wires, which are significantly thinner than those grown previously using SiCl4.
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Cited by
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Control of Thickness and Orientation of Solution-Grown Silicon Nanowires
Holmes, J. D., Johnston, K. P., Doty, R. C., & Korgel, B. A. (2000) · Science · doi:10.1126/science.287.5457.1471 · Cited by 1,540
Nanomaterials via Laser Ablation/Irradiation in Liquid: A Review
Zeng, H., Du, X., Singh, S. C., Kulinich, S. A., Yang, S., He, J., & Cai, W. (2012) · Advanced Functional Materials · doi:10.1002/adfm.201102295 · Cited by 966
Wolfsteller, A., Geyer, N., Nguyen-Duc, T.-K., Das Kanungo, P., Zakharov, N. D., Reiche, M., Erfurth, W., Blumtritt, H., Kalem, S., Werner, P., et al. (2010) · Thin Solid Films · doi:10.1016/j.tsf.2009.08.021 · Cited by 54
Metadata
- Authors
- Westwater, J., Gosain, D. P., Tomiya, S., Usui, S., & Ruda, H.
- Venue
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Publisher
- American Vacuum Society
- Published
- 1997-05-01
- Volume
- 15
- Issue
- 3
- Pages
- 554-557
- ISSN
- 1071-1023 (ISSN-L)
- 1520-8567
- OpenAlex
- W2025990259
- Cited by
- 652
- References
- 0
- FWCI
- 12.34
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction. https://app.cochat.ai/papers/10.1116/1.589291
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- Westwater, J., Gosain, D. P., Tomiya, S., Usui, S., & Ruda, H. (1997). Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. https://doi.org/10.1116/1.589291
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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