The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
Open accessAbstract
The Schottky barrier for carrier injection into 2D semiconductors can be effectively tuned by using 2D metals.
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Cites
Generalized Gradient Approximation Made Simple
Perdew, J. P., Burke, K., & Ernzerhof, M. (1996) · Physical Review Letters · doi:10.1103/physrevlett.77.3865 · Cited by 215,824
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
Kresse, G., & Furthmüller, J. (1996) · Physical Review B · doi:10.1103/physrevb.54.11169 · Cited by 123,652
Projector augmented-wave method
Blöchl, P. E. (1994) · Physical Review B · doi:10.1103/physrevb.50.17953 · Cited by 92,732
From ultrasoft pseudopotentials to the projector augmented-wave method
Kresse, G., & Joubert, D. (1999) · Physical Review B · doi:10.1103/physrevb.59.1758 · Cited by 85,307
Special points for Brillouin-zone integrations
Monkhorst, H. J., & Pack, J. D. (1976) · Physical Review B · doi:10.1103/physrevb.13.5188 · Cited by 71,721
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Cited by
Field-effect transistors made from solution-grown two-dimensional tellurene
Wang, Y., Qiu, G., Wang, R., Huang, S., Wang, Q., Liu, Y., Du, Y., Goddard, W. A., Kim, M. J., Xu, X., et al. (2018) · Nature Electronics · doi:10.1038/s41928-018-0058-4 · Cited by 915
Self-citationTopological superconductivity in a van der Waals heterostructure
Kezilebieke, S., Huda, M. N., Vaňo, V., Aapro, M., Ganguli, S. C., Silveira, O. J., Głodzik, S., Foster, A. S., Ojanen, T., & Liljeroth, P. (2020) · Nature · doi:10.1038/s41586-020-2989-y · Cited by 394
Atomically thin p–n junctions based on two-dimensional materials
Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
Metadata
- Authors
- Liu, Y., Stradins, P., & Wei, S.-H.
- Venue
- Science Advances
- Published
- 2016-04
- Volume
- 2
- Issue
- 4
- Pages
- e1600069-e1600069
- ISSN
- 2375-2548 (ISSN-L)
- OpenAlex
- W2342174548
- Cited by
- 692
- References
- 6
- FWCI
- 24.30
- Type
- journal article
- Language
- en
- Open access
- gold
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- CoChat. (2026). Citation check: Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier. https://app.cochat.ai/papers/10.1126/sciadv.1600069
- The paper
- Liu, Y., Stradins, P., & Wei, S.-H. (2016). Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier. Science Advances. https://doi.org/10.1126/sciadv.1600069
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
