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PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

Talapin, Dmitri V., Murray, Christopher B.·2005·Science

Abstract

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically “activated” to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 10 3 to 10 4 ; and with current density approaching 3 × 10 4 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.

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Metadata

Authors
Talapin, D. V., & Murray, C. B.
Venue
Science
Published
2005-10-07
Volume
310
Issue
5745
Pages
86-89
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W1998483116
Cited by
1,680
References
0
FWCI
36.68
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors. https://app.cochat.ai/papers/10.1126/science.1116703
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Talapin, D. V., & Murray, C. B. (2005). PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors. Science. https://doi.org/10.1126/science.1116703

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.