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Cited by 984

The DOI matches its Crossref record; 6 of the 6 references it cites were found in a registry or an index.

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

Williams, J. R., DiCarlo, L., Marcus, C. M.·2007·Science

Abstract

The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and \batchmode \documentclass[fleqn,10pt,legalpaper]{article} \usepackage{amssymb} \usepackage{amsfonts} \usepackage{amsmath} \pagestyle{empty} \begin{document} \({3}/{2}\) \end{document} times the quantum of conductance, e 2 /h , consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.

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Crossref · 10.1126/science.1144657

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Metadata

Authors
Williams, J. R., DiCarlo, L., & Marcus, C. M.
Venue
Science
Published
2007-08-03
Volume
317
Issue
5838
Pages
638-641
ISSN
  • 0036-8075 (ISSN-L)
  • 1095-9203
OpenAlex
W2057892740
Cited by
984
References
6
FWCI
39.86
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene. https://app.cochat.ai/papers/10.1126/science.1144657
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Williams, J. R., DiCarlo, L., & Marcus, C. M. (2007). Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene. Science. https://doi.org/10.1126/science.1144657

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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