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Magnetic Domain-Wall Racetrack Memory
Abstract
Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of ∼10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
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Citations
Cited by
Tokura, Y., & Kanazawa, N. (2021) · Chemical Reviews · doi:10.1021/acs.chemrev.0c00297 · Cited by 726
Universal current-velocity relation of skyrmion motion in chiral magnets
Iwasaki, J., Mochizuki, M., & Nagaosa, N. (2013) · Nature Communications · doi:10.1038/ncomms2442 · Cited by 722
Bader, S. D., & Parkin, S. S. P. (2010) · Annual Review of Condensed Matter Physics · doi:10.1146/annurev-conmatphys-070909-104123 · Cited by 700
Self-citationPerspective: Magnetic skyrmions—Overview of recent progress in an active research field
Everschor-Sitte, K., Masell, J., Reeve, R. M., & Kläui, M. (2018) · Journal of Applied Physics · doi:10.1063/1.5048972 · Cited by 601
Microscopic approach to current-driven domain wall dynamics
Tatara, G., Kohno, H., & Shibata, J. (2008) · Physics Reports · doi:10.1016/j.physrep.2008.07.003 · Cited by 423
Metadata
- Authors
- Parkin, S. S. P., Hayashi, M., & Thomas, L.
- Venue
- Science
- Published
- 2008-04-11
- Volume
- 320
- Issue
- 5873
- Pages
- 190-194
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W1981443800
- Cited by
- 4,635
- References
- 0
- FWCI
- 107.12
- Type
- journal article
- Language
- en
- Open access
- closed
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