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Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges
Abstract
Heteroepitaxy Writ Thin: A common method for creating a thin single-crystal layer of a semiconductor for use in an electronic device is heteroepitaxy—growing the layer on the face of a single crystal of a different material that acts as a template for assembly. Liu et al. (p. 163 ) now describe a similar process in which the edge of a graphene layer that was grown on a copper surface directs the assembly of a monolayer of hexagonal boron nitride. The boron nitride grew from inside edge of holes created in the graphene layer. The interface and the relative orientation of the two layers were determined by a variety of scanning microscopy and surface diffraction techniques.
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Cited by
Vertical and in-plane heterostructures from WS2/MoS2 monolayers
Gong, Y., Lin, J., Wang, X., Shi, G., Lei, S., Lin, Z., Zou, X., Ye, G., Vajtai, R., Yakobson, B. I., et al. (2014) · Nature Materials · doi:10.1038/nmat4091 · Cited by 2,323
Two-dimensional transition metal dichalcogenide nanosheet-based composites
Tan, C., & Zhang, H. (2015) · Chemical Society Reviews · doi:10.1039/c4cs00182f · Cited by 1,605
Cai, Z., Liu, B., Zou, X., & Cheng, H.-M. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00536 · Cited by 1,495
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
Duan, X., Wang, C., Shaw, J. C., Cheng, R., Chen, Y., Li, H., Wu, X., Tang, Y., Zhang, Q., Pan, A., et al. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.222 · Cited by 1,241
Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
Huang, C., Wu, S., Sanchez, A. M., Peters, J. J. P., Beanland, R., Ross, J. S., Rivera, P., Yao, W., Cobden, D. H., & Xu, X. (2014) · Nature Materials · doi:10.1038/nmat4064 · Cited by 1,017
Metadata
- Authors
- Liu, L., Park, J., Siegel, D. A., McCarty, K. F., Clark, K. W., Deng, W., Basile, L., Idrobo, J. C., Li, A.-P., & Gu, G.
- Venue
- Science
- Published
- 2014-01-10
- Volume
- 343
- Issue
- 6167
- Pages
- 163-167
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W2095125190
- Cited by
- 547
- References
- 0
- FWCI
- 29.33
- Type
- journal article
- Language
- en
- Open access
- closed
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- Liu, L., Park, J., Siegel, D. A., McCarty, K. F., Clark, K. W., Deng, W., Basile, L., Idrobo, J. C., Li, A.-P., & Gu, G. (2014). Heteroepitaxial Growth of Two-Dimensional Hexagonal Boron Nitride Templated by Graphene Edges. Science. https://doi.org/10.1126/science.1246137
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
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