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Ferroelectric Memories
Abstract
In the past year it has become possible to fabricate ferroelectric thin-film memories onto standard silicon integrated circuits that combine very high speed (30-nanosecond read/erase/rewrite operation), 5-volt standard silicon logic levels, very high density (2 by 2 micrometer cell size), complete nonvolatility (no standby power required), and extreme radiation hardness. These ferroelectric random-access memories are expected to replace magnetic core memory, magnetic bubble memory systems, and electrically erasable read-only memory for many applications. The switching kinetics of these films, 100 to 300 nanometers thick, are now well understood, with switching times that fit an activation field dependence that scales applied field and temperature. Earlier problems of fatigue and retention failure are also now understood and have been improved to acceptable levels.
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Citations
Cited by
Memory effects in complex materials and nanoscale systems
Pershin, Y. V., & Di Ventra, M. (2011) · Advances In Physics · doi:10.1080/00018732.2010.544961 · Cited by 823
Metal-free three-dimensional perovskite ferroelectrics
Ye, H.-Y., Tang, Y.-Y., Li, P.-F., Liao, W.-Q., Gao, J.-X., Hua, X.-N., Cai, H., Shi, P.-P., You, Y.-M., & Xiong, R.-G. (2018) · Science · doi:10.1126/science.aas9330 · Cited by 814
Terahertz field–induced ferroelectricity in quantum paraelectric SrTiO 3
Li, X., Qiu, T., Zhang, J., Baldini, E., Lu, J., Rappe, A. M., & Nelson, K. A. (2019) · Science · doi:10.1126/science.aaw4913 · Cited by 523
Nguyen, T. D., Mao, S., Yeh, Y., Purohit, P. K., & McAlpine, M. C. (2013) · Advanced Materials · doi:10.1002/adma.201203852 · Cited by 513
Unfolding grain size effects in barium titanate ferroelectric ceramics
Tan, Y., Zhang, J., Wu, Y., Wang, C., Koval, V., Shi, B., Ye, H., McKinnon, R., Viola, G., & Yan, H. (2015) · Scientific Reports · doi:10.1038/srep09953 · Cited by 379
Metadata
- Authors
- Scott, J. F., & Paz de Araujo, C. A.
- Venue
- Science
- Published
- 1989-12-15
- Volume
- 246
- Issue
- 4936
- Pages
- 1400-1405
- ISSN
- 0036-8075 (ISSN-L)
- 1095-9203
- OpenAlex
- W4246749317
- Cited by
- 3,863
- References
- 0
- FWCI
- 40.03
- Type
- journal article
- Language
- en
- Open access
- closed
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- Scott, J. F., & Paz de Araujo, C. A. (1989). Ferroelectric Memories. Science. https://doi.org/10.1126/science.246.4936.1400
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